SSH60N08 Datasheet. Specs and Replacement

Type Designator: SSH60N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-3P

  📄📄 Copy 

SSH60N08 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH60N08 datasheet

 ..1. Size:402K  samsung
ssh60n08.pdf pdf_icon

SSH60N08

SSH60N10 PCB 24 ... See More ⇒

Detailed specifications: SSH10N80, SSH11N90, SSH3N90, SSH4N55, SSH4N60, SSH4N80, SSH4N90, SSH5N90, 2SK3878, SSH6N80, SSH8N70, SSH8N80, SSI2N60B, SSI4N60B, SSM03N70GH, SSM03N70GJ, SSM03N70GP-H

Keywords - SSH60N08 MOSFET specs

 SSH60N08 cross reference

 SSH60N08 equivalent finder

 SSH60N08 pdf lookup

 SSH60N08 substitution

 SSH60N08 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.