SSH60N08 Datasheet. Specs and Replacement
Type Designator: SSH60N08 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 950 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-3P
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SSH60N08 substitution
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SSH60N08 datasheet
Detailed specifications: SSH10N80, SSH11N90, SSH3N90, SSH4N55, SSH4N60, SSH4N80, SSH4N90, SSH5N90, 2SK3878, SSH6N80, SSH8N70, SSH8N80, SSI2N60B, SSI4N60B, SSM03N70GH, SSM03N70GJ, SSM03N70GP-H
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
History: IRF9393PBF
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