All MOSFET. SSH60N08 Datasheet

 

SSH60N08 Datasheet and Replacement


   Type Designator: SSH60N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 280 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-3P
 

 SSH60N08 substitution

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SSH60N08 Datasheet (PDF)

 ..1. Size:402K  samsung
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SSH60N08

SSH60N10 PCB24

Datasheet: SSH10N80 , SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , 5N60 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H .

Keywords - SSH60N08 MOSFET datasheet

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