SSH60N08 PDF and Equivalents Search

 

SSH60N08 Specs and Replacement

Type Designator: SSH60N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 950 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-3P

SSH60N08 substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH60N08 datasheet

 ..1. Size:402K  samsung
 ssh60n08.pdf pdf_icon

SSH60N08

SSH60N10 PCB 24 ... See More ⇒

Detailed specifications: SSH10N80 , SSH11N90 , SSH3N90 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , IRLB4132 , SSH6N80 , SSH8N70 , SSH8N80 , SSI2N60B , SSI4N60B , SSM03N70GH , SSM03N70GJ , SSM03N70GP-H .

Keywords - SSH60N08 MOSFET specs

 SSH60N08 cross reference
 SSH60N08 equivalent finder
 SSH60N08 pdf lookup
 SSH60N08 substitution
 SSH60N08 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
↑ Back to Top
.