All MOSFET. AFN9530 Datasheet

 

AFN9530 Datasheet and Replacement


   Type Designator: AFN9530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO-220
 

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AFN9530 Datasheet (PDF)

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AFN9530

AFN9530 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9530, N-Channel enhancement mode 90V/15A,RDS(ON)= 78m@VGS=10V MOSFET, uses Advanced Trench Technology to 90V/12A,RDS(ON)= 88m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

Datasheet: AFN8904 , AFN8918 , AFN8936 , AFN8968 , AFN8987 , AFN8987W , AFN8988 , AFN8988W , 2N60 , AFN9910 , AFN9971 , AFN9971B , AFN9972S , AFN9977 , AFN9987 , AFN9995S , AFN9997 .

History: CS7N65A4TDY | NTMS5838NLR2G | NTLJF3118NTAG

Keywords - AFN9530 MOSFET datasheet

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