AFN9530 Datasheet. Specs and Replacement
Type Designator: AFN9530 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: TO-220
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AFN9530 datasheet
afn9530.pdf
AFN9530 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9530, N-Channel enhancement mode 90V/15A,RDS(ON)= 78m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/12A,RDS(ON)= 88m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo... See More ⇒
Detailed specifications: AFN8904, AFN8918, AFN8936, AFN8968, AFN8987, AFN8987W, AFN8988, AFN8988W, STF13NM60N, AFN9910, AFN9971, AFN9971B, AFN9972S, AFN9977, AFN9987, AFN9995S, AFN9997
Keywords - AFN9530 MOSFET specs
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History: NDF08N50Z | BUK761R5-40E | NDD03N50Z | FDD5N50U | IXFH70N20Q3 | SI7405BDN | AGM13T30A
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