AFP1413 Datasheet and Replacement
Type Designator: AFP1413
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 223 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SOT-323
AFP1413 Datasheet (PDF)
afp1413.pdf

AFP1413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1413, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=160m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su
afp1433.pdf

AFP1433 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1433, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=185m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
Datasheet: AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 , AFP1303 , IRFZ48N , AFP1433 , AFP1810 , AFP1913 , AFP2301 , AFP2301A , AFP2301AS , AFP2301S , AFP2303 .
History: OSG65R200JT3F
Keywords - AFP1413 MOSFET datasheet
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History: OSG65R200JT3F



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