All MOSFET. AFP1413 Datasheet

 

AFP1413 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFP1413
   Marking Code: 13*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.8 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT-323

 AFP1413 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP1413 Datasheet (PDF)

 ..1. Size:524K  alfa-mos
 afp1413.pdf

AFP1413 AFP1413

AFP1413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1413, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=160m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

 9.1. Size:570K  alfa-mos
 afp1433.pdf

AFP1413 AFP1413

AFP1433 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1433, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=185m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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