AM1330N Datasheet. Specs and Replacement

Type Designator: AM1330N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SC-70

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AM1330N datasheet

 ..1. Size:154K  analog power
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AM1330N

Analog Power AM1330N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 2.0 battery-powered products such... See More ⇒

 9.1. Size:123K  analog power
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AM1330N

Analog Power AM1331P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VG = -10V -1.5 converters and power management in portable and S -30 battery-powered produ... See More ⇒

Detailed specifications: AM110N06-08P, AM110P06-06B, AM110P08-11B, AM12N65P, AM12N65PCFM, AM1320N, AM1321P, AM1323P, IRF640, AM1331P, AM1340N, AM1360NE, AM1370N, AM1400NE, AM1420N, AM1421P, AM1430N

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