AM1330N Datasheet and Replacement
Type Designator: AM1330N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SC-70
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AM1330N Datasheet (PDF)
am1330n.pdf

Analog Power AM1330NN-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 2.0battery-powered products such
am1331p.pdf

Analog Power AM1331PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.112 @ VG = -10V -1.5converters and power management in portable and S-30battery-powered produ
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM6A12NSFP | FCPF7N60YDTU | SPD04N60S5 | AP6679GI-HF | NTD4855N-1G | DM12N65C
Keywords - AM1330N MOSFET datasheet
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History: SM6A12NSFP | FCPF7N60YDTU | SPD04N60S5 | AP6679GI-HF | NTD4855N-1G | DM12N65C



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