STC6332 Datasheet and Replacement
Type Designator: STC6332
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT-363
STC6332 substitution
STC6332 Datasheet (PDF)
stc6332.pdf

STC6332STC6332STC6332STC6332N&P Pair Enhancement Mode MOSFET0.95A / -1ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STC6332 is the N & P-Channel enhancement mode power field effect transistorusing high cell density DMOS trench technology. This high density process isespecially tailored to minimize on-state resistance and provide superior switchingperformance. This d
stc6301d.pdf

STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati
Datasheet: IRFU48ZPBF , IRFU5305PBF , STC4516 , STC4539 , STC4545 , STC4567 , STC4606 , STC4614 , 50N06 , STC6602 , STC6614 , STD100N03LT4 , STD100N10F7 , STD100NH02LT4 , STD100NH03LT4 , STD105N10F7AG , STD10N60M2 .
History: NTMFS4C032N | MTDP4953Q8 | AS2101W | TPB60R840C | TSG10N06AT | RTR025N05FRA | RU2HE2D
Keywords - STC6332 MOSFET datasheet
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History: NTMFS4C032N | MTDP4953Q8 | AS2101W | TPB60R840C | TSG10N06AT | RTR025N05FRA | RU2HE2D



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