STC6332 Datasheet. Specs and Replacement

Type Designator: STC6332  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT-363

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STC6332 datasheet

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STC6332

STC6332 STC6332 STC6332 STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This d... See More ⇒

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STC6332

STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati... See More ⇒

Detailed specifications: IRFU48ZPBF, IRFU5305PBF, STC4516, STC4539, STC4545, STC4567, STC4606, STC4614, IRF540N, STC6602, STC6614, STD100N03LT4, STD100N10F7, STD100NH02LT4, STD100NH03LT4, STD105N10F7AG, STD10N60M2

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