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STC6332 Spec and Replacement


   Type Designator: STC6332
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT-363

 STC6332 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STC6332 Specs

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STC6332

STC6332 STC6332 STC6332 STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This d... See More ⇒

 9.1. Size:917K  stansontech
 stc6301d.pdf pdf_icon

STC6332

STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati... See More ⇒

Detailed specifications: IRFU48ZPBF , IRFU5305PBF , STC4516 , STC4539 , STC4545 , STC4567 , STC4606 , STC4614 , 50N06 , STC6602 , STC6614 , STD100N03LT4 , STD100N10F7 , STD100NH02LT4 , STD100NH03LT4 , STD105N10F7AG , STD10N60M2 .

History: JMPF18N50BJ

Keywords - STC6332 MOSFET specs

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