STD5NM50T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD5NM50T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 88 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: DPAK
STD5NM50T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD5NM50T4 Datasheet (PDF)
0.1. std5nm50t4.pdf 
Size:338K _st
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO
0.2. std5nm50t4.pdf Size:277K _inchange_semiconductor
isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage ±30 V
6.1. std5nm50 std5nm50-1.pdf Size:423K _st
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO
6.2. std5nm50.pdf Size:463K _st
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STD5NM50 500V <0.8Ω 7.5 A STD5NM50-1 500V <0.8Ω 7.5 A TYPICAL RDS(on) = 0.7Ω 3 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DPAK IPAK TIGHT PROCESS CONTROL AND HIGH TO-252 TO
Datasheet: STD5N60M2 , STD5N95K5 , STD5NK40Z-1 , STD5NK40ZT4 , STD5NK50Z-1 , STD5NK50ZT4 , STD5NK52ZD-1 , STD5NK60ZT4 , BUZ90 , STD5NM60-1 , STD5NM60T4 , STD60NF06T4 , STD60NF3LLT4 , STD60NF55LT4 , STD60NH03L-1 , STD60NH03LT4 , STD6N60M2 .
