STD7ANM60N MOSFET. Datasheet pdf. Equivalent
Type Designator: STD7ANM60N
Marking Code: 7ANM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 24.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: DPAK
STD7ANM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD7ANM60N Datasheet (PDF)
stb7anm60n std7anm60n.pdf
STB7ANM60N, STD7ANM60NAutomotive-grade N-channel 600 V, 5 A, 0.84 typ., MDmesh II Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeatures Order codes VDS @ Tjmax RDS(on) max. IDTABSTB7ANM60N650 V 0.9 5 A TAB STD7ANM60N2 Designed for automotive applications and 3311AEC-Q101 qualified2DPAKD PAK 100% avalanche tested
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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