All MOSFET. STD7ANM60N Datasheet

 

STD7ANM60N Datasheet and Replacement


   Type Designator: STD7ANM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 24.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: DPAK
 

 STD7ANM60N substitution

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STD7ANM60N Datasheet (PDF)

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STD7ANM60N

STB7ANM60N, STD7ANM60NAutomotive-grade N-channel 600 V, 5 A, 0.84 typ., MDmesh II Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeatures Order codes VDS @ Tjmax RDS(on) max. IDTABSTB7ANM60N650 V 0.9 5 A TAB STD7ANM60N2 Designed for automotive applications and 3311AEC-Q101 qualified2DPAKD PAK 100% avalanche tested

Datasheet: STD6NK50ZT4 , STD6NM60N , STD6NM60N-1 , STD70N02L , STD70N02L-1 , STD70N03L , STD70N03L-1 , STD70NH02LT4 , STF13NM60N , STD7N60M2 , STD7N65M2 , STD7N80K5 , STD7NK30Z , STD7NK40Z-1 , STD7NK40ZT4 , STD7NM50N , STD7NM50N-1 .

History: AM4403

Keywords - STD7ANM60N MOSFET datasheet

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