STD7ANM60N Datasheet. Specs and Replacement

Type Designator: STD7ANM60N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 24.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: DPAK

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STD7ANM60N datasheet

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STD7ANM60N

STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 typ., MDmesh II Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ Tjmax RDS(on) max. ID TAB STB7ANM60N 650 V 0.9 5 A TAB STD7ANM60N 2 Designed for automotive applications and 3 3 1 1 AEC-Q101 qualified 2 DPAK D PAK 100% avalanche tested ... See More ⇒

Detailed specifications: STD6NK50ZT4, STD6NM60N, STD6NM60N-1, STD70N02L, STD70N02L-1, STD70N03L, STD70N03L-1, STD70NH02LT4, IRFP450, STD7N60M2, STD7N65M2, STD7N80K5, STD7NK30Z, STD7NK40Z-1, STD7NK40ZT4, STD7NM50N, STD7NM50N-1

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.