STD9HN65M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD9HN65M2
Marking Code: 9HN65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11.5 nC
Rise Time (tr): 4.6 nS
Drain-Source Capacitance (Cd): 16 pF
Maximum Drain-Source On-State Resistance (Rds): 0.82 Ohm
Package: DPAK
STD9HN65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD9HN65M2 Datasheet (PDF)
0.1. std9hn65m2.pdf 
Size:492K _st
STD9HN65M2 N-channel 600 V, 0.71 Ω typ., 5.5 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD9HN65M2 600 V 0.82 Ω 5.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Figure 1: Internal schematic diagram Applications D(
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