All MOSFET. STD9HN65M2 Datasheet

 

STD9HN65M2 Datasheet and Replacement


   Type Designator: STD9HN65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
   Package: DPAK
 

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STD9HN65M2 Datasheet (PDF)

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STD9HN65M2

STD9HN65M2 N-channel 600 V, 0.71 typ., 5.5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD9HN65M2 600 V 0.82 5.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(

Datasheet: STD8NF25 , STD8NM60N-1 , STD90N02L , STD90N02L-1 , STD90NH02LT4 , STD95N04 , STD95NH02LT4 , STD96N3LLH6 , IRFZ46N , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , STE139N65M5 , STE145N65M5 , STE88N65M5 .

History: IXTP08N50D2 | IXTP06N120P | 3SK81 | IXTP08N100D2 | 3SK77Y | IXTP05N100

Keywords - STD9HN65M2 MOSFET datasheet

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