All MOSFET. STD9HN65M2 Datasheet

 

STD9HN65M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD9HN65M2

Marking Code: 9HN65M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11.5 nC

Rise Time (tr): 4.6 nS

Drain-Source Capacitance (Cd): 16 pF

Maximum Drain-Source On-State Resistance (Rds): 0.82 Ohm

Package: DPAK

STD9HN65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD9HN65M2 Datasheet (PDF)

0.1. std9hn65m2.pdf Size:492K _st

STD9HN65M2
STD9HN65M2

STD9HN65M2 N-channel 600 V, 0.71 Ω typ., 5.5 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD9HN65M2 600 V 0.82 Ω 5.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Figure 1: Internal schematic diagram Applications D(

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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