STE88N65M5 Specs and Replacement
Type Designator: STE88N65M5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 494 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 223 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: ISOTOP
STE88N65M5 substitution
STE88N65M5 datasheet
ste88n65m5.pdf
STE88N65M5 N-channel 650 V, 0.024 typ., 88 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - production data Features Order code VDS @Tjmax RDS(on) max ID STE88N65M5 710 V 0.029 88 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performance ISOTOPTM 100% avalanche tested Applications Figure 1. Internal sch... See More ⇒
Detailed specifications: STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , STE139N65M5 , STE145N65M5 , RU7088R , STF100N10F7 , STF10N105K5 , STF10N60M2 , STF10N80K5 , STF10N95K5 , STF10P6F6 , STF110N10F7 , STF11N50M2 .
History: FDC3612
Keywords - STE88N65M5 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FDC3612
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