All MOSFET. STE88N65M5 Datasheet

 

STE88N65M5 Datasheet and Replacement


   Type Designator: STE88N65M5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 494 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 88 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: ISOTOP
 

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STE88N65M5 Datasheet (PDF)

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STE88N65M5

STE88N65M5N-channel 650 V, 0.024 typ., 88 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - production dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE88N65M5 710 V 0.029 88 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performanceISOTOPTM 100% avalanche testedApplicationsFigure 1. Internal sch

Datasheet: STD9HN65M2 , STD9N40M2 , STD9N60M2 , STD9N65M2 , STD9NM40N , STD9NM50N-1 , STE139N65M5 , STE145N65M5 , AON7403 , STF100N10F7 , STF10N105K5 , STF10N60M2 , STF10N80K5 , STF10N95K5 , STF10P6F6 , STF110N10F7 , STF11N50M2 .

History: DHI10H037R | IXFH80N25X3

Keywords - STE88N65M5 MOSFET datasheet

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