All MOSFET. IXFN44N60 Datasheet

 

IXFN44N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFN44N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 330 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT227B

 IXFN44N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN44N60 Datasheet (PDF)

 ..1. Size:128K  ixys
 ixfn44n60.pdf

IXFN44N60 IXFN44N60

HiPerFETTMIXFN 44N60 VDSS = 600 VPower MOSFETsID25 = 44 ASingle Die MOSFET RDS(on) = 130 mWDtrr 250 nsN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 600 VSVDGR TJ = 25C to 150C; RGS = 1 MW 600 VGVGS Continuous 20 VVGSM Transient 30 VSI

 7.1. Size:162K  ixys
 ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf

IXFN44N60 IXFN44N60

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 7.2. Size:108K  ixys
 ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf

IXFN44N60 IXFN44N60

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 7.3. Size:151K  ixys
 ixfn44n50u2-u3 ixfn48n50u2-u3.pdf

IXFN44N60 IXFN44N60

VDSS ID (cont) RDS(on) trrHiPerFETTM500 V 44 A 0.12 W 35 nsIXFN44N50U2 IXFN44N50U3Power MOSFETsIXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns3 3Buck & Boost Configurations forPFC & Motor Control Circuits422Preliminary data411miniBLOC, SOT-227 BSymbol Test Conditions Maximum Ratings1VDSS TJ = 25C to 150C 500 V2VDGR TJ = 25C to 150C; RGS = 1 MW 5

 7.4. Size:138K  ixys
 ixfn44n80.pdf

IXFN44N60 IXFN44N60

IXFN 44N80 VDSS = 800 VHiPerFETTMID25 = 44 APower MOSFETsRDS(on) = 0.165 Single MOSFET DieDN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)VDSS TJ = 25C to 150C 800 V E153432SVDGR TJ = 25C to 150C; RGS = 1 M 800 VGVGS Continuous 20 VVGSM Tran

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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