IXFN44N60 MOSFET PDF: N-Ch, 600V, 44A. Datasheet. Full specification with pinout and replacement list

IXFN44N60 Specs and Replacement

   Type Designator: IXFN44N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT227B

IXFN44N60 substitution

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IXFN44N60 datasheet

..1. Size:128K ixys
ixfn44n60.pdf pdf_icon

HiPerFETTM IXFN 44N60 VDSS = 600 V Power MOSFETs ID25 = 44 A Single Die MOSFET RDS(on) = 130 mW D trr 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 600 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V G VGS Continuous 20 V VGSM Transient 30 V S I... See More ⇒

7.1. Size:162K ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C ... See More ⇒

7.2. Size:108K ixys
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7.3. Size:151K ixys
ixfn44n50u2-u3 ixfn48n50u2-u3.pdf pdf_icon

VDSS ID (cont) RDS(on) trr HiPerFETTM 500 V 44 A 0.12 W 35 ns IXFN44N50U2 IXFN44N50U3 Power MOSFETs IXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 Preliminary data 4 1 1 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VDSS TJ = 25 C to 150 C 500 V 2 VDGR TJ = 25 C to 150 C; RGS = 1 MW 5... See More ⇒