IRHF67230 Datasheet. Specs and Replacement
Type Designator: IRHF67230 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 214 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: TO-39
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IRHF67230 datasheet
irhf67230.pdf
PD-97311 RADIATION HARDENED IRHF67230 POWER MOSFET 200V, N-CHANNEL TECHNOLOGY THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID IRHF67230 100K Rads (Si) 0.145 9.1A IRHF63230 300K Rads (Si) 0.145 9.1A T0-39 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single ... See More ⇒
Detailed specifications: IRFZ48ZPBF, IRFZ48ZSPBF, IRHF57214SE, IRHF57230, IRHF57234SE, IRHF597110, IRHF597130, IRHF597230, IRF9540N, IRHF7110, STF12N120K5, STF12N50M2, STF12N60M2, STF12N65M2, STF12NK80Z, STF12NM50N, STF12NM60N
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