IRHF67230 Specs and Replacement
Type Designator: IRHF67230
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 214 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: TO-39
IRHF67230 substitution
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IRHF67230 datasheet
irhf67230.pdf
PD-97311 RADIATION HARDENED IRHF67230 POWER MOSFET 200V, N-CHANNEL TECHNOLOGY THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID IRHF67230 100K Rads (Si) 0.145 9.1A IRHF63230 300K Rads (Si) 0.145 9.1A T0-39 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single ... See More ⇒
Detailed specifications: IRFZ48ZPBF , IRFZ48ZSPBF , IRHF57214SE , IRHF57230 , IRHF57234SE , IRHF597110 , IRHF597130 , IRHF597230 , 2N7002 , IRHF7110 , STF12N120K5 , STF12N50M2 , STF12N60M2 , STF12N65M2 , STF12NK80Z , STF12NM50N , STF12NM60N .
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