All MOSFET. IRHF67230 Datasheet

 

IRHF67230 Datasheet and Replacement


   Type Designator: IRHF67230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TO-39
 

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IRHF67230 Datasheet (PDF)

 ..1. Size:203K  international rectifier
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IRHF67230

PD-97311RADIATION HARDENED IRHF67230POWER MOSFET 200V, N-CHANNELTECHNOLOGYTHRU-HOLE (TO-39)Product Summary Part Number Radiation Level RDS(on) ID IRHF67230 100K Rads (Si) 0.145 9.1A IRHF63230 300K Rads (Si) 0.145 9.1AT0-39International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.These devices have improved immunity to Single

Datasheet: IRFZ48ZPBF , IRFZ48ZSPBF , IRHF57214SE , IRHF57230 , IRHF57234SE , IRHF597110 , IRHF597130 , IRHF597230 , K4145 , IRHF7110 , STF12N120K5 , STF12N50M2 , STF12N60M2 , STF12N65M2 , STF12NK80Z , STF12NM50N , STF12NM60N .

Keywords - IRHF67230 MOSFET datasheet

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