IXFR180N07 Datasheet and Replacement. Cross Reference Search

IXFR180N07 Datasheet (PDF)

..1. Size:32K ixys
ixfr180n07.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 180N07 VDSS = 70 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 6 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 MW 70 VGVGS Continuous 20 VDVGSM Transient 30 VIsolated back surface*ID

5.1. Size:57K ixys
ixfr180n085.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 180N085 VDSS = 85 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 7 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25C

6.1. Size:152K ixys
ixfr180n15p.pdf pdf_icon

IXFR 180N15P VDSS = 150 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 13 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 150 V E153432VDGR TJ

6.2. Size:33K ixys
ixfr180n10.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 180N10 VDSS = 100 VISOPLUS247TMID25 = 165 A(Electrically Isolated Back Surface) RDS(on)= 8 mWtrr 250 nsSingle MOSFET DiePreliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VGVGSM Transient 30 VDIsolated back surface*ID25

Datasheet: IXFN60N60 , IXFN73N30 , IXFN80N50 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , AON6414A , IXFR180N085 , IXFR180N10 , IXFR24N100 , IXFR24N50 , IXFR24N50Q , IXFR26N50 , IXFR26N50Q , IXFR30N50Q .