IXFR50N50 Datasheet. Specs and Replacement

Type Designator: IXFR50N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO247

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IXFR50N50 datasheet

 ..1. Size:75K  ixys
 ixfr50n50 ixfr55n50.pdf pdf_icon

IXFR50N50

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 50N50 500 V 43 A 100 m ISOPLUS247TM IXFR 55N50 500 V 48 A 90 m (Electrically Isolated Back Surface) trr 250 ns Single Die MOSFET Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS... See More ⇒

 9.1. Size:89K  ixys
 ixfr58n20q.pdf pdf_icon

IXFR50N50

IXFR 58N20Q V = 200 V HiPerFETTM Power MOSFETs DSS ID25 = 50 A ISOPLUS247TM Q-Class RDS(on) = 40 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C... See More ⇒

Detailed specifications: IXFR180N10, IXFR24N100, IXFR24N50, IXFR24N50Q, IXFR26N50, IXFR26N50Q, IXFR30N50Q, IXFR32N50Q, IRF630, IXFR55N50, IXFR58N20Q, IXFR80N20Q, IXFT10N100, IXFT12N100, IXFT12N100Q, IXFT13N80Q, IXFT14N100

Keywords - IXFR50N50 MOSFET specs

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