IRF1010ESPBF Datasheet. Specs and Replacement

Type Designator: IRF1010ESPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-263

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IRF1010ESPBF substitution

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IRF1010ESPBF datasheet

 ..1. Size:222K  international rectifier
 irf1010espbf irf1010elpbf.pdf pdf_icon

IRF1010ESPBF

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro... See More ⇒

 ..2. Size:222K  international rectifier
 irf1010elpbf irf1010espbf.pdf pdf_icon

IRF1010ESPBF

PD - 95444 IRF1010ESPbF IRF1010ELPbF l Advanced Process Technology l Surface Mount (IRF1010ES) HEXFET Power MOSFET l Low-profile through-hole (IRF1010EL) D l 175 C Operating Temperature VDSS = 60V l Fast Switching l Fully Avalanche Rated RDS(on) = 12m l Lead-Free G Description Advanced HEXFET Power MOSFETs from International ID = 84A S Rectifier utilize advanced pro... See More ⇒

 5.1. Size:123K  international rectifier
 irf1010es.pdf pdf_icon

IRF1010ESPBF

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175 C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m G Description Advanced HEXFET Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achi... See More ⇒

 5.2. Size:196K  international rectifier
 irf1010esl.pdf pdf_icon

IRF1010ESPBF

PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175 C Operating Temperature RDS(on) = 0.012 G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely... See More ⇒

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Detailed specifications: IRF044SMD, IRF054SMD, IRF100B201, IRF100B202, IRF100S201, IRF1010A, IRF1010ELPBF, IRF1010EPBF, 10N65, IRF1010EZLPBF, IRF1010EZPBF, IRF1010EZSPBF, IRF1010H, IRF1010NLPBF, IRF1010NPBF, IRF1010NSPBF, IRF1010ZLPBF

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