SPW55N80C3 Datasheet. Specs and Replacement

Type Designator: SPW55N80C3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: PG-TO-247

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SPW55N80C3 datasheet

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SPW55N80C3

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C3 800V 800V CoolMOS C3 Power Transistor SPW55N80C3 Data Sheet Rev. 2.0 Final Industrial & Multimarket 800V CoolMOS C3 Power Transistor SPW55N80C3 TO-247 1 Description 800V CoolMOS C3 designed for Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward)... See More ⇒

Detailed specifications: SPP77N05, SPP80N05, SPP80N05L, SPP80N06S-08, SPP80P06P, SPP80P06PG, SPR80N03, SPU07N20G, 4N60, SQ1420EEH, SQ1421EEH, SQ1431EH, SQ1470AEH, SQ1470EH, SQ1539EH, SQ1563AEH, SQ1902AEL

Keywords - SPW55N80C3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.