All MOSFET. SPW55N80C3 Datasheet

 

SPW55N80C3 Datasheet and Replacement


   Type Designator: SPW55N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: PG-TO-247
 

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SPW55N80C3 Datasheet (PDF)

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SPW55N80C3

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C3 800V800V CoolMOS C3 Power TransistorSPW55N80C3Data SheetRev. 2.0FinalIndustrial & Multimarket800V CoolMOS C3 Power TransistorSPW55N80C3TO-2471 Description800V CoolMOS C3 designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward)

Datasheet: SPP77N05 , SPP80N05 , SPP80N05L , SPP80N06S-08 , SPP80P06P , SPP80P06PG , SPR80N03 , SPU07N20G , 4N60 , SQ1420EEH , SQ1421EEH , SQ1431EH , SQ1470AEH , SQ1470EH , SQ1539EH , SQ1563AEH , SQ1902AEL .

Keywords - SPW55N80C3 MOSFET datasheet

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