All MOSFET. SPW55N80C3 Datasheet

 

SPW55N80C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPW55N80C3
   Marking Code: 55N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 54.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 288 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: PG-TO-247

 SPW55N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPW55N80C3 Datasheet (PDF)

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 spw55n80c3.pdf

SPW55N80C3 SPW55N80C3

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C3 800V800V CoolMOS C3 Power TransistorSPW55N80C3Data SheetRev. 2.0FinalIndustrial & Multimarket800V CoolMOS C3 Power TransistorSPW55N80C3TO-2471 Description800V CoolMOS C3 designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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