SPW55N80C3 Specs and Replacement
Type Designator: SPW55N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 305 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: PG-TO-247
SPW55N80C3 substitution
SPW55N80C3 datasheet
spw55n80c3.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C3 800V 800V CoolMOS C3 Power Transistor SPW55N80C3 Data Sheet Rev. 2.0 Final Industrial & Multimarket 800V CoolMOS C3 Power Transistor SPW55N80C3 TO-247 1 Description 800V CoolMOS C3 designed for Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward)... See More ⇒
Detailed specifications: SPP77N05 , SPP80N05 , SPP80N05L , SPP80N06S-08 , SPP80P06P , SPP80P06PG , SPR80N03 , SPU07N20G , AO3407 , SQ1420EEH , SQ1421EEH , SQ1431EH , SQ1470AEH , SQ1470EH , SQ1539EH , SQ1563AEH , SQ1902AEL .
History: SDF07N65
Keywords - SPW55N80C3 MOSFET specs
SPW55N80C3 cross reference
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SPW55N80C3 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SDF07N65
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