All MOSFET. SQ4330EY Datasheet

 

SQ4330EY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4330EY

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 4.3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 34 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 344 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: SO-8

SQ4330EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4330EY Datasheet (PDF)

0.1. sq4330ey.pdf Size:250K _vishay

SQ4330EY
SQ4330EY

SQ4330EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.022 AEC-Q101 QualifieddID (A) 8.0 100 % Rg and UIS TestedConfiguration Dual Compliant to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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