All MOSFET. SQ4330EY Datasheet

 

SQ4330EY Datasheet and Replacement


   Type Designator: SQ4330EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 344 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SO-8
 

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SQ4330EY Datasheet (PDF)

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SQ4330EY

SQ4330EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.022 AEC-Q101 QualifieddID (A) 8.0 100 % Rg and UIS TestedConfiguration Dual Compliant to

Datasheet: SQ3460EV , SQ3469EV , SQ3481EV , SQ3985EV , SQ4182EY , SQ4184EY , SQ4282EY , SQ4284EY , IRFB4110 , SQ4401DY , SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY .

History: GSM1012

Keywords - SQ4330EY MOSFET datasheet

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