SQ4330EY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4330EY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 4.3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 34 nC
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 344 pF
Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm
Package: SO-8
SQ4330EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4330EY Datasheet (PDF)
0.1. sq4330ey.pdf 
Size:250K _vishay
SQ4330EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.016 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.022 AEC-Q101 QualifieddID (A) 8.0 100 % Rg and UIS TestedConfiguration Dual Compliant to
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