SQ4483EEY Specs and Replacement
Type Designator: SQ4483EEY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 712 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SO-8
SQ4483EEY substitution
SQ4483EEY datasheet
sq4483eey.pdf
SQ4483EEY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 ESD Protection 3000 V RDS(on) ( ) at VGS = - 10 V 0.0085 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0200 AEC-Q101 Qualifiedc ID (A) - 22 Material categorization Configuration Single For de... See More ⇒
sq4483ey.pdf
SQ4483EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -30 AEC-Q101 qualified c RDS(on) ( ) at VGS = -10 V 0.0085 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.0200 Material categorization ID (A) -22 for definitions of compliance please see Configuration Single ... See More ⇒
Detailed specifications: SQ4330EY , SQ4401DY , SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY , IRF9540 , SQ4483EY , SQ4532AEY , SQ4840EY , SQ4850EY , SQ4917EY , SQ4920EY , SQ4936EY , SQ4937EY .
Keywords - SQ4483EEY MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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