All MOSFET. SQ4483EEY Datasheet

 

SQ4483EEY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4483EEY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 82 nS

Drain-Source Capacitance (Cd): 712 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: SO-8

SQ4483EEY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4483EEY Datasheet (PDF)

1.1. sq4483eey.pdf Size:254K _update

SQ4483EEY
SQ4483EEY

SQ4483EEY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) - 30 • ESD Protection: 3000 V RDS(on) () at VGS = - 10 V 0.0085 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 4.5 V 0.0200 • AEC-Q101 Qualifiedc ID (A) - 22 • Material categorization: Configuration Single For de

3.1. sq4483ey.pdf Size:298K _update

SQ4483EEY
SQ4483EEY

SQ4483EY www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) -30 • AEC-Q101 qualified c RDS(on) (Ω) at VGS = -10 V 0.0085 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = -4.5 V 0.0200 • Material categorization: ID (A) -22 for definitions of compliance please see Configuration Single

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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