All MOSFET. SQ4532AEY Datasheet

 

SQ4532AEY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4532AEY

Marking Code: Q4532A

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 3.3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 7.3 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 5.9 nC

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 82 pF

Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm

Package: SO-8

SQ4532AEY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4532AEY Datasheet (PDF)

0.1. sq4532aey.pdf Size:332K _vishay

SQ4532AEY
SQ4532AEY

SQ4532AEYwww.vishay.comVishay SiliconixAutomotive N-and P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 qualified cVDS (V) 30 -30 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.031 0.070 Material categorization: RDS(on) () at VGS = 4.5 V 0.042 0.190for definitions of compliance p

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