All MOSFET. SQ4532AEY Datasheet

 

SQ4532AEY Datasheet and Replacement


   Type Designator: SQ4532AEY
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SO-8
 

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SQ4532AEY Datasheet (PDF)

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SQ4532AEY

SQ4532AEYwww.vishay.comVishay SiliconixAutomotive N-and P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 qualified cVDS (V) 30 -30 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.031 0.070 Material categorization: RDS(on) () at VGS = 4.5 V 0.042 0.190for definitions of compliance p

Datasheet: SQ4401EY , SQ4410EY , SQ4425EY , SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , IRFP260 , SQ4840EY , SQ4850EY , SQ4917EY , SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY .

History: TK100E08N1

Keywords - SQ4532AEY MOSFET datasheet

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