SQ4532AEY MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4532AEY
Marking Code: Q4532A
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 3.3 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 7.3 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 5.9 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 82 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: SO-8
SQ4532AEY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4532AEY Datasheet (PDF)
0.1. sq4532aey.pdf 
Size:332K _vishay
SQ4532AEYwww.vishay.comVishay SiliconixAutomotive N-and P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETN-CHANNEL P-CHANNEL AEC-Q101 qualified cVDS (V) 30 -30 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.031 0.070 Material categorization: RDS(on) () at VGS = 4.5 V 0.042 0.190for definitions of compliance p
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