All MOSFET. SQ4917EY Datasheet

 

SQ4917EY Datasheet and Replacement


   Type Designator: SQ4917EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 334 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SO-8
 

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SQ4917EY Datasheet (PDF)

 ..1. Size:314K  vishay
 sq4917ey.pdf pdf_icon

SQ4917EY

SQ4917EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.0480 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0612 Material categorization: ID (A) per leg -8For definitions of compliance please see Configura

 ..2. Size:3690K  cn vbsemi
 sq4917ey.pdf pdf_icon

SQ4917EY

SQ4917EYwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 100 % Rg and UIS testedRDS(on) () at VGS = -10 V 0.050RDS(on) () at VGS = -4.5 V 0.060ID (A) per leg -8SSO-8S1 8 DGS D2 7S3 6 DG D4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMET

Datasheet: SQ4431EY , SQ4435EY , SQ4470EY , SQ4483EEY , SQ4483EY , SQ4532AEY , SQ4840EY , SQ4850EY , IRF1010E , SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY , SQ4953EY .

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