All MOSFET. SQ4917EY Datasheet

 

SQ4917EY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4917EY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 5 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 43.4 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 334 pF

Maximum Drain-Source On-State Resistance (Rds): 0.048 Ohm

Package: SO-8

SQ4917EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4917EY Datasheet (PDF)

0.1. sq4917ey.pdf Size:314K _vishay

SQ4917EY
SQ4917EY

SQ4917EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.0480 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0612 Material categorization: ID (A) per leg -8For definitions of compliance please see Configura

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