SQ4917EY Datasheet. Specs and Replacement

Type Designator: SQ4917EY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 334 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SO-8

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SQ4917EY datasheet

 ..1. Size:314K  vishay
sq4917ey.pdf pdf_icon

SQ4917EY

SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified c RDS(on) ( ) at VGS = -10 V 0.0480 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.0612 Material categorization ID (A) per leg -8 For definitions of compliance please see Configura... See More ⇒

 ..2. Size:3690K  cn vbsemi
sq4917ey.pdf pdf_icon

SQ4917EY

SQ4917EY www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMET... See More ⇒

Detailed specifications: SQ4431EY, SQ4435EY, SQ4470EY, SQ4483EEY, SQ4483EY, SQ4532AEY, SQ4840EY, SQ4850EY, IRF1010E, SQ4920EY, SQ4936EY, SQ4937EY, SQ4940EY, SQ4942EY, SQ4946AEY, SQ4949EY, SQ4953EY

Keywords - SQ4917EY MOSFET specs

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