SQ4936EY PDF and Equivalents Search

 

SQ4936EY PDF Specs and Replacement

   Type Designator: SQ4936EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SO-8
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