SS07N70 Datasheet. Specs and Replacement

Type Designator: SS07N70  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO-251

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SS07N70 datasheet

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SS07N70

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 700V 700V CoolMOS C6 Power Transistor SS07N70 Data Sheet ev. 0 in l Industrial & Multimarket 700V CoolMOS C6 Power Transistor SS07N70 IPAK SL 1 Descripti n t b CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneered by Infineon... See More ⇒

Detailed specifications: SRM6N70, SRM7N60, SRM7N65, SRM7N65D1-E1, SRM7N65DTR-E1, SRM7N65TF-E1, SRM7N65TC-E1, SS05N70, IRF1404, SSD80N03, SSFM2506L, SSFM2508, ST1002, ST1004SRG, ST1005SRG, ST10E4, ST12N10D

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