SS07N70 Datasheet and Replacement
Type Designator: SS07N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-251
SS07N70 substitution
SS07N70 Datasheet (PDF)
ss07n70.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 700V700V CoolMOS C6 Power TransistorSS07N70Data Sheet ev. 0 in lIndustrial & Multimarket700V CoolMOS C6 Power TransistorSS07N70IPAK SL1 Descriptint bCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S ) principle andpioneered by Infineon
Datasheet: SRM6N70 , SRM7N60 , SRM7N65 , SRM7N65D1-E1 , SRM7N65DTR-E1 , SRM7N65TF-E1 , SRM7N65TC-E1 , SS05N70 , IRF540N , SSD80N03 , SSFM2506L , SSFM2508 , ST1002 , ST1004SRG , ST1005SRG , ST10E4 , ST12N10D .
History: SUN82A20CI | GSM2301A
Keywords - SS07N70 MOSFET datasheet
SS07N70 cross reference
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SS07N70 lookup
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History: SUN82A20CI | GSM2301A



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