SS07N70 Specs and Replacement
Type Designator: SS07N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-251
SS07N70 substitution
SS07N70 datasheet
ss07n70.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 700V 700V CoolMOS C6 Power Transistor SS07N70 Data Sheet ev. 0 in l Industrial & Multimarket 700V CoolMOS C6 Power Transistor SS07N70 IPAK SL 1 Descripti n t b CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneered by Infineon... See More ⇒
Detailed specifications: SRM6N70 , SRM7N60 , SRM7N65 , SRM7N65D1-E1 , SRM7N65DTR-E1 , SRM7N65TF-E1 , SRM7N65TC-E1 , SS05N70 , IRF540N , SSD80N03 , SSFM2506L , SSFM2508 , ST1002 , ST1004SRG , ST1005SRG , ST10E4 , ST12N10D .
History: 2N7635-GA
Keywords - SS07N70 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2N7635-GA
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