All MOSFET. SS07N70 Datasheet

 

SS07N70 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SS07N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.3 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO-251

 SS07N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SS07N70 Datasheet (PDF)

 ..1. Size:945K  infineon
 ss07n70.pdf

SS07N70 SS07N70

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 700V700V CoolMOS C6 Power TransistorSS07N70Data Sheet ev. 0 in lIndustrial & Multimarket700V CoolMOS C6 Power TransistorSS07N70IPAK SL1 Descriptint bCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S ) principle andpioneered by Infineon

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTP15N06LFI

 

 
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