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SUP36N20-54P Spec and Replacement


   Type Designator: SUP36N20-54P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-220AB

 SUP36N20-54P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP36N20-54P Specs

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SUP36N20-54P

SUP36N20-54P New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.053 at VGS = 15 V RoHS 36 200 57 COMPLIANT 100 % Rg and UIS Tested 0.054 at VGS = 10 V 36 APPLICATIONS Power Supply Lighting Systems TO-220AB D G G D S S ... See More ⇒

Detailed specifications: SUM90N08-6M2P , SUM90N08-7M6P , SUM90N10-8M2P , SUM90P10-19 , SUM90P10-19L , SUP18N15-95 , SUP25P10-138 , SUP28N15-52 , IRFZ46N , SUP40N10-30 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P , SUP50N10-21P , SUP53P06-20 , SUP57N20-33 .

History: ZVN4206GVTC | ZVN4210GTA | PTD12N10 | 2SK1292 | SSS5N80A

Keywords - SUP36N20-54P MOSFET specs

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