All MOSFET. SUP36N20-54P Datasheet

 

SUP36N20-54P Datasheet and Replacement


   Type Designator: SUP36N20-54P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-220AB
 

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SUP36N20-54P Datasheet (PDF)

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SUP36N20-54P

SUP36N20-54PNew ProductVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.053 at VGS = 15 V RoHS36200 57 COMPLIANT 100 % Rg and UIS Tested0.054 at VGS = 10 V36APPLICATIONS Power Supply Lighting SystemsTO-220ABDGG D SS

Datasheet: SUM90N08-6M2P , SUM90N08-7M6P , SUM90N10-8M2P , SUM90P10-19 , SUM90P10-19L , SUP18N15-95 , SUP25P10-138 , SUP28N15-52 , STP65NF06 , SUP40N10-30 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P , SUP50N10-21P , SUP53P06-20 , SUP57N20-33 .

History: SM4364NAKP | RQJ0305EQDQA | ZXMP3A16N8TA | AON6266 | KRLML6401 | P057AAT | TDM3428B

Keywords - SUP36N20-54P MOSFET datasheet

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