SUP36N20-54P Datasheet. Specs and Replacement

Type Designator: SUP36N20-54P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: TO-220AB

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SUP36N20-54P datasheet

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SUP36N20-54P

SUP36N20-54P New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.053 at VGS = 15 V RoHS 36 200 57 COMPLIANT 100 % Rg and UIS Tested 0.054 at VGS = 10 V 36 APPLICATIONS Power Supply Lighting Systems TO-220AB D G G D S S ... See More ⇒

Detailed specifications: SUM90N08-6M2P, SUM90N08-7M6P, SUM90N10-8M2P, SUM90P10-19, SUM90P10-19L, SUP18N15-95, SUP25P10-138, SUP28N15-52, AO4468, SUP40N10-30, SUP40N25-60, SUP40P10-43, SUP45N03-13L, SUP50N03-5M1P, SUP50N10-21P, SUP53P06-20, SUP57N20-33

Keywords - SUP36N20-54P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.