All MOSFET. SUP57N20-33 Datasheet

 

SUP57N20-33 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUP57N20-33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 200 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 57 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 90 nC
   Rise Time (tr): 220 nS
   Drain-Source Capacitance (Cd): 480 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm
   Package: TO-220AB

 SUP57N20-33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP57N20-33 Datasheet (PDF)

 ..1. Size:74K  vishay
sup57n20-33 sup57n20.pdf

SUP57N20-33
SUP57N20-33

SUP57N20-33Vishay SiliconixN-Channel 200-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.033 at VGS = 10 V200 57RoHS*COMPLIANTAPPLICATIONS Isolated DC/DC converters- Primary-Side SwitchTO-220ABDDRAIN connected to TABGG D STop ViewSOrdering Infor

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
Back to Top