SUP57N20-33 Datasheet. Specs and Replacement

Type Designator: SUP57N20-33  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 220 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: TO-220AB

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SUP57N20-33 datasheet

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SUP57N20-33

SUP57N20-33 Vishay Siliconix N-Channel 200-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.033 at VGS = 10 V 200 57 RoHS* COMPLIANT APPLICATIONS Isolated DC/DC converters - Primary-Side Switch TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Infor... See More ⇒

Detailed specifications: SUP36N20-54P, SUP40N10-30, SUP40N25-60, SUP40P10-43, SUP45N03-13L, SUP50N03-5M1P, SUP50N10-21P, SUP53P06-20, 3401, SUP60N02-4M5P, SUP60N06-12P, SUP60N10-16L, SUP60N10-18P, SUP65P04-15, SUP70N03-09BP, SUP75N03-04, SUP75P03-07

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.