All MOSFET. SUP57N20-33 Datasheet

 

SUP57N20-33 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUP57N20-33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO-220AB

 SUP57N20-33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP57N20-33 Datasheet (PDF)

 ..1. Size:74K  vishay
 sup57n20-33 sup57n20.pdf

SUP57N20-33 SUP57N20-33

SUP57N20-33Vishay SiliconixN-Channel 200-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.033 at VGS = 10 V200 57RoHS*COMPLIANTAPPLICATIONS Isolated DC/DC converters- Primary-Side SwitchTO-220ABDDRAIN connected to TABGG D STop ViewSOrdering Infor

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSM9928GEO | STH80N05FI | BCS4N10

 

 
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