SUP57N20-33 PDF and Equivalents Search

 

SUP57N20-33 Specs and Replacement


   Type Designator: SUP57N20-33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO-220AB
 

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SUP57N20-33 datasheet

 ..1. Size:74K  vishay
 sup57n20-33 sup57n20.pdf pdf_icon

SUP57N20-33

SUP57N20-33 Vishay Siliconix N-Channel 200-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.033 at VGS = 10 V 200 57 RoHS* COMPLIANT APPLICATIONS Isolated DC/DC converters - Primary-Side Switch TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Infor... See More ⇒

Detailed specifications: SUP36N20-54P , SUP40N10-30 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P , SUP50N10-21P , SUP53P06-20 , RU7088R , SUP60N02-4M5P , SUP60N06-12P , SUP60N10-16L , SUP60N10-18P , SUP65P04-15 , SUP70N03-09BP , SUP75N03-04 , SUP75P03-07 .

History: 3SK74K | PE6A6BA | 3SK186 | FDG6303N | SDF130JDA-D | SDF120JDA-D | HGD090NE6AL

Keywords - SUP57N20-33 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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