SUP57N20-33 MOSFET. Datasheet pdf. Equivalent
Type Designator: SUP57N20-33
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 57 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO-220AB
SUP57N20-33 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUP57N20-33 Datasheet (PDF)
sup57n20-33 sup57n20.pdf
SUP57N20-33Vishay SiliconixN-Channel 200-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.033 at VGS = 10 V200 57RoHS*COMPLIANTAPPLICATIONS Isolated DC/DC converters- Primary-Side SwitchTO-220ABDDRAIN connected to TABGG D STop ViewSOrdering Infor
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