All MOSFET. SUP57N20-33 Datasheet

 

SUP57N20-33 Datasheet and Replacement


   Type Designator: SUP57N20-33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO-220AB
 

 SUP57N20-33 substitution

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SUP57N20-33 Datasheet (PDF)

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SUP57N20-33

SUP57N20-33Vishay SiliconixN-Channel 200-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.033 at VGS = 10 V200 57RoHS*COMPLIANTAPPLICATIONS Isolated DC/DC converters- Primary-Side SwitchTO-220ABDDRAIN connected to TABGG D STop ViewSOrdering Infor

Datasheet: SUP36N20-54P , SUP40N10-30 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P , SUP50N10-21P , SUP53P06-20 , MMD60R360PRH , SUP60N02-4M5P , SUP60N06-12P , SUP60N10-16L , SUP60N10-18P , SUP65P04-15 , SUP70N03-09BP , SUP75N03-04 , SUP75P03-07 .

History: WFY6N02 | IRFU014A

Keywords - SUP57N20-33 MOSFET datasheet

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