SUU09N10-76P PDF and Equivalents Search

 

SUU09N10-76P Specs and Replacement


   Type Designator: SUU09N10-76P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO-251
 

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SUU09N10-76P datasheet

 ..1. Size:98K  vishay
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SUU09N10-76P

SUU09N10-76P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition 0.076 at VGS = 10 V TrenchFET Power MOSFET 9d 100 8.5 100 % Rg and UIS Tested 0.096 at VGS = 6 V 9d Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS DC/DC Conver... See More ⇒

Detailed specifications: SUP90N06-6M0P , SUP90N08-4M8P , SUP90N08-6M8P , SUP90N08-7M7P , SUP90N08-8M2P , SUP90N10-8M8P , SUP90N15-18P , SUP90P06-09L , AON6414A , SUU10P10-195 , SUV85N10-10 , SM1105NSK , SM1105NSUB , SM1108NSF , SM1110NSA , SM1110NSC , SM1A01NFS .

History: SLP18N50C

Keywords - SUU09N10-76P MOSFET specs

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