SUU09N10-76P Datasheet. Specs and Replacement

Type Designator: SUU09N10-76P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: TO-251

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SUU09N10-76P datasheet

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SUU09N10-76P

SUU09N10-76P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition 0.076 at VGS = 10 V TrenchFET Power MOSFET 9d 100 8.5 100 % Rg and UIS Tested 0.096 at VGS = 6 V 9d Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS DC/DC Conver... See More ⇒

Detailed specifications: SUP90N06-6M0P, SUP90N08-4M8P, SUP90N08-6M8P, SUP90N08-7M7P, SUP90N08-8M2P, SUP90N10-8M8P, SUP90N15-18P, SUP90P06-09L, 10N60, SUU10P10-195, SUV85N10-10, SM1105NSK, SM1105NSUB, SM1108NSF, SM1110NSA, SM1110NSC, SM1A01NFS

Keywords - SUU09N10-76P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.