SUU09N10-76P MOSFET. Datasheet pdf. Equivalent
Type Designator: SUU09N10-76P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.7 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 71 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: TO-251
SUU09N10-76P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUU09N10-76P Datasheet (PDF)
..1. Size:98K vishay
suu09n10-76p.pdf
suu09n10-76p.pdf
SUU09N10-76PVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.076 at VGS = 10 V TrenchFET Power MOSFET9d100 8.5 100 % Rg and UIS Tested0.096 at VGS = 6 V9d Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS DC/DC Conver
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
