VN2460N8 Datasheet. Specs and Replacement

Type Designator: VN2460N8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm

Package: SOT-89

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VN2460N8 datasheet

 8.1. Size:700K  supertex
 vn2460.pdf pdf_icon

VN2460N8

Supertex inc. VN2460 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertex s well-proven Ease of paralleling silicon-gate manufacturing process. This combination Low CISS and fast switching speed... See More ⇒

Detailed specifications: VN2406, VN2406D, VN2406L, VN2410, VN2410L, VN2410LS, VN2450N8, VN2450N3, IRF1407, VN2460N3, SM8206AO, SM8A01NSW, SM8A02NSF, SM8A02NSFP, SM8A02NSW, SM8A03NSW, SM8A04NSF

Keywords - VN2460N8 MOSFET specs

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