All MOSFET. VN2460N8 Datasheet

 

VN2460N8 Datasheet and Replacement


   Type Designator: VN2460N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: SOT-89
 

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VN2460N8 Datasheet (PDF)

 8.1. Size:700K  supertex
 vn2460.pdf pdf_icon

VN2460N8

Supertex inc. VN2460N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertexs well-proven Ease of paralleling silicon-gate manufacturing process. This combination Low CISS and fast switching speed

Datasheet: VN2406 , VN2406D , VN2406L , VN2410 , VN2410L , VN2410LS , VN2450N8 , VN2450N3 , 5N65 , VN2460N3 , SM8206AO , SM8A01NSW , SM8A02NSF , SM8A02NSFP , SM8A02NSW , SM8A03NSW , SM8A04NSF .

History: MDF11N65B | FQP27N25 | F10N60 | FQP2N60C

Keywords - VN2460N8 MOSFET datasheet

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