VN2460N8 Specs and Replacement
Type Designator: VN2460N8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: SOT-89
VN2460N8 substitution
VN2460N8 datasheet
vn2460.pdf
Supertex inc. VN2460 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertex s well-proven Ease of paralleling silicon-gate manufacturing process. This combination Low CISS and fast switching speed... See More ⇒
Detailed specifications: VN2406 , VN2406D , VN2406L , VN2410 , VN2410L , VN2410LS , VN2450N8 , VN2450N3 , 2SK3568 , VN2460N3 , SM8206AO , SM8A01NSW , SM8A02NSF , SM8A02NSFP , SM8A02NSW , SM8A03NSW , SM8A04NSF .
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