VN2460N8 MOSFET. Datasheet pdf. Equivalent
Type Designator: VN2460N8
Marking Code: VN4F*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: SOT-89
VN2460N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VN2460N8 Datasheet (PDF)
8.1. Size:700K supertex
vn2460.pdf
vn2460.pdf
Supertex inc. VN2460N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes Low power drive requirement a vertical DMOS structure and Supertexs well-proven Ease of paralleling silicon-gate manufacturing process. This combination Low CISS and fast switching speed
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
