All MOSFET. HCD7N70S Datasheet

 

HCD7N70S MOSFET. Datasheet pdf. Equivalent

Type Designator: HCD7N70S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 9 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: D-PAK

HCD7N70S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCD7N70S Datasheet (PDF)

1.1. hcd7n70s.pdf Size:191K _semihow

HCD7N70S HCD7N70S

Apr 2014 BVDSS = 700 V RDS(on) typ = 0.95 HCD7N70S ID = 6.0 A 700V N-Channel Super Junction MOSFET D-PAK FEATURES 2 Originative New Design 1 Superior Avalanche Rugged Technology 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operatin

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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