HCD7N70S Datasheet. Specs and Replacement

Type Designator: HCD7N70S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: D-PAK

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HCD7N70S datasheet

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HCD7N70S

Apr 2014 BVDSS = 700 V RDS(on) typ = 0.95 HCD7N70S ID = 6.0 A 700V N-Channel Super Junction MOSFET D-PAK FEATURES 2 Originative New Design 1 Superior Avalanche Rugged Technology 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9 nC (Typ.) Extended Safe Operatin... See More ⇒

Detailed specifications: HAT2038RJ, HAT2114RJ, HAT2126RP, HAT2153R, HAT2265H, HAT3008RJ, HAT3018RJ, HCD6NC70S, RFP50N06, HCH20NT60V, HCP12NK65V, HCP20NT60V, HCS12NK65V, HCS20NT60V, HCT7000M, HCT7000MTXV, HCU6N70S

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