All MOSFET. HFS5N65S Datasheet

 

HFS5N65S Datasheet and Replacement


   Type Designator: HFS5N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.5 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: TO-220F
 
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HFS5N65S Datasheet (PDF)

 ..1. Size:202K  semihow
 hfs5n65s.pdf pdf_icon

HFS5N65S

Oct 2009BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

 0.1. Size:792K  semihow
 hfs5n65sa.pdf pdf_icon

HFS5N65S

Dec. 2021BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SAID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14.2 nC (Typ.) Extended Safe Op

 7.1. Size:598K  semihow
 hfs5n65js.pdf pdf_icon

HFS5N65S

Mar. 2023HFS5N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.0 A Excellent Switching CharacteristicsRDS(on), Typ 2.26 100% Avalanche TestedQg, Typ 12.7 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 7.2. Size:315K  semihow
 hfs5n65u.pdf pdf_icon

HFS5N65S

March 2013BVDSS = 650 VRDS(on) typ HFS5N65U ID = 4.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

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Keywords - HFS5N65S MOSFET datasheet

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