HUF75545S3 MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75545S3
Marking Code: 75545S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 195 nC
trⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 1100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-262AA
HUF75545S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75545S3 Datasheet (PDF)
huf75545p3 huf75545s3 huf75545s3s.pdf
HUF75545P3, HUF75545S3, HUF75545S3SData Sheet September 200275A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABDRAINFeaturesSOURCE (FLANGE)DRAINGATE Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER DRAINElectrical Models (FLANG
huf75545s3 huf75545s3st.pdf
HUF75545P3, HUF75545S3, HUF75545S3SData Sheet September 200275A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABDRAINFeaturesSOURCE (FLANGE)DRAINGATE Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER DRAINElectrical Models (FLANG
huf75545p3 huf75545s3s.pdf
HUF75545P3, HUF75545S3SData Sheet October 2013N-Channel UltraFET Power MOSFET80 V, 75 A, 10 mFeaturesPackaging Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VJEDEC TO-220AB JEDEC TO-263ABDRAIN Simulation ModelsSOURCE (FLANGE)DRAIN- Temperature Compensated PSPICE and SABERGATEElectrical ModelsGATE- Spice and SABER Thermal Impedance Models
huf75542p3-s3s.pdf
HUF75542P3, HUF75542S3SData Sheet December 200175A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAIN Ultra Low On-ResistanceGATE- rDS(ON) = 0.014, VGS = 10V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElectrical ModelsDRAIN- Spice and SABER Thermal Impedance Model
huf75531sk8t.pdf
HUF75531SK8Data Sheet December 20016A, 80V, 0.030 Ohm, N-Channel,UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.030, VGS = 10V Simulation Models5- Temperature Compensated PSPICE and SABER 1 Electrical Models23 - Spice and SABER Thermal Impedance Models4- www.fairchildsemi.com Peak Curren
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