All MOSFET. HUF75545S3 Datasheet

 

HUF75545S3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HUF75545S3
   Marking Code: 75545S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 195 nC
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-262AA

 HUF75545S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF75545S3 Datasheet (PDF)

 ..1. Size:270K  fairchild semi
huf75545p3 huf75545s3 huf75545s3s.pdf

HUF75545S3
HUF75545S3

HUF75545P3, HUF75545S3, HUF75545S3SData Sheet September 200275A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABDRAINFeaturesSOURCE (FLANGE)DRAINGATE Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER DRAINElectrical Models (FLANG

 ..2. Size:267K  fairchild semi
huf75545s3 huf75545s3st.pdf

HUF75545S3
HUF75545S3

HUF75545P3, HUF75545S3, HUF75545S3SData Sheet September 200275A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABDRAINFeaturesSOURCE (FLANGE)DRAINGATE Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER DRAINElectrical Models (FLANG

 0.1. Size:805K  onsemi
huf75545p3 huf75545s3s.pdf

HUF75545S3
HUF75545S3

HUF75545P3, HUF75545S3SData Sheet October 2013N-Channel UltraFET Power MOSFET80 V, 75 A, 10 mFeaturesPackaging Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VJEDEC TO-220AB JEDEC TO-263ABDRAIN Simulation ModelsSOURCE (FLANGE)DRAIN- Temperature Compensated PSPICE and SABERGATEElectrical ModelsGATE- Spice and SABER Thermal Impedance Models

 7.1. Size:192K  fairchild semi
huf75542p3-s3s.pdf

HUF75545S3
HUF75545S3

HUF75542P3, HUF75542S3SData Sheet December 200175A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAIN Ultra Low On-ResistanceGATE- rDS(ON) = 0.014, VGS = 10V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElectrical ModelsDRAIN- Spice and SABER Thermal Impedance Model

 8.1. Size:238K  fairchild semi
huf75531sk8t.pdf

HUF75545S3
HUF75545S3

HUF75531SK8Data Sheet December 20016A, 80V, 0.030 Ohm, N-Channel,UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.030, VGS = 10V Simulation Models5- Temperature Compensated PSPICE and SABER 1 Electrical Models23 - Spice and SABER Thermal Impedance Models4- www.fairchildsemi.com Peak Curren

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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