All MOSFET. PJQ2888 Datasheet

 

PJQ2888 Datasheet and Replacement


   Type Designator: PJQ2888
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm
   Package: DFN2020-8L
 

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PJQ2888 Datasheet (PDF)

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PJQ2888

PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode DFN2020-8L Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A

Datasheet: PJE8400 , PJE8401 , PJE8402 , PJE8403 , PJE8404 , PJE8405 , PJE8406 , PJL9801 , 4435 , PJS50N03 , PJS6400 , PJS6401 , PJS6404 , PJS6405 , PJS6407 , PJS6413 , PJS6414 .

History: 2SK1469 | PJA55P03 | AM2303 | SIHFBC40AS | AP4420GH | AP6982GM-HF | NTD85N02R

Keywords - PJQ2888 MOSFET datasheet

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