PJQ2888 MOSFET. Datasheet pdf. Equivalent

   Type Designator: PJQ2888
   Marking Code: 888
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.2 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm
   Package: DFN2020-8L

PJQ2888 Transistor Equivalent Substitute - MOSFET Cross-Reference Search