PJQ2888 Datasheet. Specs and Replacement

Type Designator: PJQ2888  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.325 Ohm

Package: DFN2020-8L

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PJQ2888 datasheet

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PJQ2888

PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode DFN2020-8L Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A... See More ⇒

Detailed specifications: PJE8400, PJE8401, PJE8402, PJE8403, PJE8404, PJE8405, PJE8406, PJL9801, 20N50, PJS50N03, PJS6400, PJS6401, PJS6404, PJS6405, PJS6407, PJS6413, PJS6414

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