All MOSFET. PMZB1200UPE Datasheet

 

PMZB1200UPE Datasheet and Replacement


   Type Designator: PMZB1200UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.41 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 5.9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DFN1006B-3
 

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PMZB1200UPE Datasheet (PDF)

 ..1. Size:212K  nxp
 pmzb1200upe.pdf pdf_icon

PMZB1200UPE

PMZB1200UPE30 V, P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 9.1. Size:220K  nxp
 pmzb150une.pdf pdf_icon

PMZB1200UPE

PMZB150UNE20 V, N-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

Datasheet: PMZ290UNE2 , PMZ320UPE , PMZ350UPE , PMZ370UNE , PMZ390UNE , PMZ550UNE , PMZ600UNE , PMZ950UPE , IRFB7545 , PMZB150UNE , PMZB200UNE , PMZB290UN , PMZB290UNE , PMZB290UNE2 , PMZB300XN , PMZB320UPE , PMZB350UPE .

Keywords - PMZB1200UPE MOSFET datasheet

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