All MOSFET. PMZB1200UPE Datasheet

 

PMZB1200UPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMZB1200UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 0.41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.7 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 5.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DFN1006B-3

 PMZB1200UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMZB1200UPE Datasheet (PDF)

 ..1. Size:212K  nxp
 pmzb1200upe.pdf

PMZB1200UPE PMZB1200UPE

PMZB1200UPE30 V, P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching

 9.1. Size:220K  nxp
 pmzb150une.pdf

PMZB1200UPE PMZB1200UPE

PMZB150UNE20 V, N-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PP9H06BV | IRCZ14 | TMPF9N50 | 2SK3778-01 | JMTL3401A | JFFM18N50C

 

 
Back to Top