PMZB1200UPE Datasheet. Specs and Replacement

Type Designator: PMZB1200UPE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.41 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 5.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: DFN1006B-3

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PMZB1200UPE datasheet

 ..1. Size:212K  nxp
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PMZB1200UPE

PMZB1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ... See More ⇒

 9.1. Size:220K  nxp
 pmzb150une.pdf pdf_icon

PMZB1200UPE

PMZB150UNE 20 V, N-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ... See More ⇒

Detailed specifications: PMZ290UNE2, PMZ320UPE, PMZ350UPE, PMZ370UNE, PMZ390UNE, PMZ550UNE, PMZ600UNE, PMZ950UPE, IRF9640, PMZB150UNE, PMZB200UNE, PMZB290UN, PMZB290UNE, PMZB290UNE2, PMZB300XN, PMZB320UPE, PMZB350UPE

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