SVF10N60T Datasheet. Specs and Replacement

Type Designator: SVF10N60T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.4 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220

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SVF10N60T substitution

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SVF10N60T datasheet

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SVF10N60T

SVF10N60T/F/S/K 10A 600V N 2 SVF10N60T/F/S/K N MOS 1 F-CellTM VDMOS 3 TO-263-2L 1 ... See More ⇒

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SVF10N60T

SVF10N60CAFJ 10A 600V N 2 SVF10N60CAFJ N MOS F-CellTM VDMOS 1 3 1. 2. ... See More ⇒

 6.3. Size:577K  silan
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SVF10N60T

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Detailed specifications: SVD540T, SVD540D, SVD540K, SVD640T, SVD640D, SVD640F, SVD9Z24NT, SVDZ24NT, 50N06, SVF10N60F, SVF10N60S, SVF10N60K, SVF10N80F, SVF10N80K, SVF12N60T, SVF12N60F, SVF12N60S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.