All MOSFET. TSM6866DCA Datasheet

 

TSM6866DCA Datasheet and Replacement


   Type Designator: TSM6866DCA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.86 nC
   tr ⓘ - Rise Time: 9.95 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSSOP-8
 

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TSM6866DCA Datasheet (PDF)

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TSM6866DCA

TSM6866D 20V Dual N-Channel MOSFET PRODUCT SUMMARY TSSOP-8 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 30 @ VGS = 4.5V 6.0 3. Source 1 6. Source 2 20 4. Gate 1 5. Gate 2 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applica

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TSM6866DCA

TSM6866SD 20V Dual N-Channel MOSFET TSSOP-8 PRODUCT SUMMARY Pin Definition: 1. Drain 1 8. Drain 2 VDS (V) RDS(on)(m) ID (A) 2. Source 1 7. Source 2 3. Source 1 6. Source 2 30 @ VGS = 4.5V 6.0 20 4. Gate 1 5. Gate 2 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applica

Datasheet: TSM4NB60CZ , TSM4ND50CP , TSM55N03CP , TSM5NB50CZ , TSM5ND50CH , TSM5ND50CP , TSM60N03CP , TSM60N06CP , 5N50 , TSM6866SDCA , TSM6963SDCA , TSM6968DCA , TSM6968SDCA , TSM6981DCA , TSM6988DCX6 , TSM6N50CH , TSM6N50CI .

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