TSM9966DCX6
MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM9966DCX6
Marking Code: 66*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SOT-26
TSM9966DCX6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM9966DCX6
Datasheet (PDF)
..1. Size:364K taiwansemi
tsm9966dcx6.pdf
TSM9966D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: 1. Gate 1 6. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 5. Drain 3. Gate 2 4. Source 2 30 @ VGS = 4.5V 6.0 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Specially Designed fo
9.1. Size:382K taiwansemi
tsm9926dcs.pdf
TSM9926D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 30 @ VGS = 4.5V 6.0 4. Gate 2 5. Drain 2 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application
9.2. Size:514K taiwansemi
tsm9933dcs.pdf
TSM9933D 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 60 @ VGS = -4.5V -4.7 4. Gate 2 5. Drain 2 58 @ VGS = -4.5V -2.9 -20 78 @ VGS = -2.7V -1.5 85 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell
Datasheet: WPB4002
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