TSM9966DCX6 Datasheet and Replacement
Type Designator: TSM9966DCX6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-26
TSM9966DCX6 substitution
TSM9966DCX6 Datasheet (PDF)
tsm9966dcx6.pdf

TSM9966D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition: 1. Gate 1 6. Source 1 VDS (V) RDS(on)(m) ID (A) 2. Drain 5. Drain 3. Gate 2 4. Source 2 30 @ VGS = 4.5V 6.0 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Specially Designed fo
tsm9926dcs.pdf

TSM9926D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 30 @ VGS = 4.5V 6.0 4. Gate 2 5. Drain 2 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application
tsm9933dcs.pdf

TSM9933D 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 60 @ VGS = -4.5V -4.7 4. Gate 2 5. Drain 2 58 @ VGS = -4.5V -2.9 -20 78 @ VGS = -2.7V -1.5 85 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell
Datasheet: TSM9426DCS , TSM9428CS , TSM9428DCS , TSM9434CS , TSM9434DCS , TSM9435CS , TSM9926DCS , TSM9933DCS , IRF1010E , TSM9N50CI , TSM9N50CZ , TSM9N90CI , TSM9N90CN , TSM9N90CZ , TSM9NB50CI , TSM9NB50CZ , TSU45N60 .
History: IPB107N20NA | BSN20BK
Keywords - TSM9966DCX6 MOSFET datasheet
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History: IPB107N20NA | BSN20BK



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