TSM9966DCX6 Datasheet. Specs and Replacement

Type Designator: TSM9966DCX6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT-26

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TSM9966DCX6 datasheet

 ..1. Size:364K  taiwansemi
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TSM9966DCX6

TSM9966D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOT-26 Pin Definition 1. Gate 1 6. Source 1 VDS (V) RDS(on)(m ) ID (A) 2. Drain 5. Drain 3. Gate 2 4. Source 2 30 @ VGS = 4.5V 6.0 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Specially Designed fo... See More ⇒

 9.1. Size:382K  taiwansemi
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TSM9966DCX6

TSM9926D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 30 @ VGS = 4.5V 6.0 4. Gate 2 5. Drain 2 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application ... See More ⇒

 9.2. Size:514K  taiwansemi
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TSM9966DCX6

TSM9933D 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 60 @ VGS = -4.5V -4.7 4. Gate 2 5. Drain 2 58 @ VGS = -4.5V -2.9 -20 78 @ VGS = -2.7V -1.5 85 @ VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell ... See More ⇒

Detailed specifications: TSM9426DCS, TSM9428CS, TSM9428DCS, TSM9434CS, TSM9434DCS, TSM9435CS, TSM9926DCS, TSM9933DCS, IRF1010E, TSM9N50CI, TSM9N50CZ, TSM9N90CI, TSM9N90CN, TSM9N90CZ, TSM9NB50CI, TSM9NB50CZ, TSU45N60

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