All MOSFET. TSU45N60 Datasheet

 

TSU45N60 Datasheet and Replacement


   Type Designator: TSU45N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 37.6 nC
   tr ⓘ - Rise Time: 6.9 nS
   Cossⓘ - Output Capacitance: 276 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-251
 

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TSU45N60 Datasheet (PDF)

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TSU45N60

TSU45N60 Table 2. Thermal CharacteristicSymbol Parameter Value Unit RJC Thermal Resistance,Junction-to-Case 2.7 /W Table 3. Electrical Characteristics (TA=25unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250A 60 V IDSS Zero Gate Voltage Drain Current(Tc=25) VDS=60V,VGS=0V 1 A

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Keywords - TSU45N60 MOSFET datasheet

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