TSU45N60 Datasheet. Specs and Replacement

Type Designator: TSU45N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.9 nS

Cossⓘ - Output Capacitance: 276 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO-251

  📄📄 Copy 

TSU45N60 substitution

- MOSFET ⓘ Cross-Reference Search

 

TSU45N60 datasheet

 ..1. Size:1583K  thinkisemi
 tsu45n60.pdf pdf_icon

TSU45N60

TSU45N60 Table 2. Thermal Characteristic Symbol Parameter Value Unit R JC Thermal Resistance,Junction-to-Case 2.7 /W Table 3. Electrical Characteristics (TA=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250 A 60 V IDSS Zero Gate Voltage Drain Current(Tc=25 ) VDS=60V,VGS=0V 1 A ... See More ⇒

Detailed specifications: TSM9966DCX6, TSM9N50CI, TSM9N50CZ, TSM9N90CI, TSM9N90CN, TSM9N90CZ, TSM9NB50CI, TSM9NB50CZ, IRLB4132, TT8J11, TT8J13, TT8J2, TT8J21, TT8J3, TT8K1, TT8K11, TT8K2

Keywords - TSU45N60 MOSFET specs

 TSU45N60 cross reference

 TSU45N60 equivalent finder

 TSU45N60 pdf lookup

 TSU45N60 substitution

 TSU45N60 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs