TSU45N60 PDF and Equivalents Search

 

TSU45N60 Specs and Replacement


   Type Designator: TSU45N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6.9 nS
   Cossⓘ - Output Capacitance: 276 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-251
 

 TSU45N60 substitution

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TSU45N60 datasheet

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TSU45N60

TSU45N60 Table 2. Thermal Characteristic Symbol Parameter Value Unit R JC Thermal Resistance,Junction-to-Case 2.7 /W Table 3. Electrical Characteristics (TA=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250 A 60 V IDSS Zero Gate Voltage Drain Current(Tc=25 ) VDS=60V,VGS=0V 1 A ... See More ⇒

Detailed specifications: TSM9966DCX6 , TSM9N50CI , TSM9N50CZ , TSM9N90CI , TSM9N90CN , TSM9N90CZ , TSM9NB50CI , TSM9NB50CZ , SKD502T , TT8J11 , TT8J13 , TT8J2 , TT8J21 , TT8J3 , TT8K1 , TT8K11 , TT8K2 .

History: 8N60KL-TF1-T | KQB27P06

Keywords - TSU45N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
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