TT8J13 Datasheet. Specs and Replacement

Type Designator: TT8J13  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: TSST8

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TT8J13 datasheet

 ..1. Size:525K  rohm
 tt8j13.pdf pdf_icon

TT8J13

Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J13 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive(1.5V drive). Abbreviated symbol J13 Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping ... See More ⇒

 9.1. Size:537K  rohm
 tt8j11.pdf pdf_icon

TT8J13

TT8J11 Pch -12V -3.5A Power MOSFET Datasheet lOutline (8) VDSS -12V (7) TSST8 (6) RDS(on) (Max.) 43mW (5) (1) ID -3.5A (2) (3) PD 1.25W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Tr1 Source (5) Tr2 Drain 2) -1.5V Drive. (2) Tr1 Gate (6) Tr2 Drain (3) Tr2 Source (7) Tr1 Drain (4) Tr2 Gate (8) Tr1 Drain 3) Built-in G-S Protection Diode. 4) Sma... See More ⇒

Detailed specifications: TSM9N50CZ, TSM9N90CI, TSM9N90CN, TSM9N90CZ, TSM9NB50CI, TSM9NB50CZ, TSU45N60, TT8J11, SPP20N60C3, TT8J2, TT8J21, TT8J3, TT8K1, TT8K11, TT8K2, TT8M1, TT8M2

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