All MOSFET. NDB710A Datasheet

 

NDB710A Datasheet and Replacement


   Type Designator: NDB710A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO263
 

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NDB710A Datasheet (PDF)

 0.1. Size:58K  fairchild semi
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NDB710A

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NDB7051L , NDB7052 , NDB7052L , NDB7060 , NDB7060L , NDB7061 , NDB7061L , NDB708A , IRF1404 , NDC631N , NDC632P , NDC651N , NDC652P , NDC7002N , NDC7003P , NDH8301N , NDH8302P .

History: CS4N65FA9HD

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