NDB710A Datasheet. Specs and Replacement

Type Designator: NDB710A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO263

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NDB710A datasheet

 0.1. Size:58K  fairchild semi
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NDB710A

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell den... See More ⇒

Detailed specifications: NDB7051L, NDB7052, NDB7052L, NDB7060, NDB7060L, NDB7061, NDB7061L, NDB708A, IRF640, NDC631N, NDC632P, NDC651N, NDC652P, NDC7002N, NDC7003P, NDH8301N, NDH8302P

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