NDC631N Datasheet and Replacement
Type Designator: NDC631N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SUPERSOT6
NDC631N substitution
NDC631N Datasheet (PDF)
ndc632p.pdf

June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5Vpower field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is Propriet
Datasheet: NDB7052 , NDB7052L , NDB7060 , NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , IRFB4110 , NDC632P , NDC651N , NDC652P , NDC7002N , NDC7003P , NDH8301N , NDH8302P , NDH8303N .
History: NDH832P | NDB710A | NTGS3455
Keywords - NDC631N MOSFET datasheet
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History: NDH832P | NDB710A | NTGS3455



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