All MOSFET. NDC631N Datasheet

 

NDC631N Datasheet and Replacement


   Type Designator: NDC631N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SUPERSOT6
      - MOSFET Cross-Reference Search

 

NDC631N Datasheet (PDF)

 9.1. Size:80K  fairchild semi
 ndc632p.pdf pdf_icon

NDC631N

June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5Vpower field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is Propriet

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFS243 | IPU039N03LG | SI5403DC | IRFF230 | SRM4N65U | AP78T10GP | HYG045N03LA1C1

Keywords - NDC631N MOSFET datasheet

 NDC631N cross reference
 NDC631N equivalent finder
 NDC631N lookup
 NDC631N substitution
 NDC631N replacement

 

 
Back to Top

 


 
.