NDC631N Specs and Replacement
Type Designator: NDC631N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SUPERSOT6
NDC631N substitution
NDC631N datasheet
ndc632p.pdf
June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode -2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5V power field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V. Fairchild's proprietary, high cell density, DMOS technology. This very high density process is Propriet... See More ⇒
Detailed specifications: NDB7052 , NDB7052L , NDB7060 , NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , IRLZ44N , NDC632P , NDC651N , NDC652P , NDC7002N , NDC7003P , NDH8301N , NDH8302P , NDH8303N .
Keywords - NDC631N MOSFET specs
NDC631N cross reference
NDC631N equivalent finder
NDC631N pdf lookup
NDC631N substitution
NDC631N replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
LIST
Last Update
MOSFET: APP540 | APP50N06 | APG250N01Q | APG095N01K | APG095N01 | APG082N01 | APG080N12 | APG078N07K | APG078N07 | APG070N12G
Popular searches
a970 | d2390 transistor | 2n5087 equivalent | tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet