All MOSFET. NDC651N Datasheet

 

NDC651N Datasheet and Replacement


   Type Designator: NDC651N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SUPERSOT6
      - MOSFET Cross-Reference Search

 

NDC651N Datasheet (PDF)

 ..1. Size:71K  fairchild semi
 ndc651n.pdf pdf_icon

NDC651N

March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V.high cell density, DMOS technology. This very high densityprocess is tailored t

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFBG20 | TK2P60D | DMN2300UFB4 | DMN60H3D5SK3 | RTF020P02TL | DMP2104LP

Keywords - NDC651N MOSFET datasheet

 NDC651N cross reference
 NDC651N equivalent finder
 NDC651N lookup
 NDC651N substitution
 NDC651N replacement

 

 
Back to Top

 


 
.