All MOSFET. NDC651N Datasheet

 

NDC651N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDC651N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SUPERSOT6

 NDC651N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDC651N Datasheet (PDF)

 ..1. Size:71K  fairchild semi
 ndc651n.pdf

NDC651N NDC651N

March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V.high cell density, DMOS technology. This very high densityprocess is tailored t

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