NDC651N Specs and Replacement
Type Designator: NDC651N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SUPERSOT6
NDC651N substitution
NDC651N datasheet
ndc651n.pdf
March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V. high cell density, DMOS technology. This very high density process is tailored t... See More ⇒
Detailed specifications: NDB7060 , NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , NDC631N , NDC632P , IRF640N , NDC652P , NDC7002N , NDC7003P , NDH8301N , NDH8302P , NDH8303N , NDH8304P , NDH831N .
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