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BUZ51 PDF Specs and Replacement


   Type Designator: BUZ51
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-220AB
 

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BUZ51 PDF Specs

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BUZ51

BUZ 51 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 51 1000 V 3.4 A 4 TO-220 AB C67078-S1344-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 3.4 Pulsed drain current IDpuls TC = 25 C 13.5 Avalanche current,limited by Tjmax IAR... See More ⇒

Detailed specifications: BUZ360 , BUZ37 , BUZ381 , BUZ383 , BUZ385 , BUZ40B , BUZ44A , BUZ45B , AON7506 , BUZ53A , BUZ53C , BUZ54 , BUZ54A , BUZ61 , BUZ61A , BUZ71S2 , BUZ72 .

Keywords - BUZ51 MOSFET specs

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