All MOSFET. BUZ51 Datasheet

 

BUZ51 Datasheet and Replacement


   Type Designator: BUZ51
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-220AB
 

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BUZ51 Datasheet (PDF)

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BUZ51

BUZ 51SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 51 1000 V 3.4 A 4 TO-220 AB C67078-S1344-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 3.4Pulsed drain current IDpulsTC = 25 C 13.5Avalanche current,limited by Tjmax IAR

Datasheet: BUZ360 , BUZ37 , BUZ381 , BUZ383 , BUZ385 , BUZ40B , BUZ44A , BUZ45B , IRFP250 , BUZ53A , BUZ53C , BUZ54 , BUZ54A , BUZ61 , BUZ61A , BUZ71S2 , BUZ72 .

History: SLB80R850SJ | PA010BV | SSM6J53FE | AP4451GYT-HF | IRF8113PBF | IPB80N04S3-06 | 2SK1694

Keywords - BUZ51 MOSFET datasheet

 BUZ51 cross reference
 BUZ51 equivalent finder
 BUZ51 lookup
 BUZ51 substitution
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