BUZ51 Datasheet. Specs and Replacement

Type Designator: BUZ51  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO-220AB

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BUZ51 datasheet

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BUZ51

BUZ 51 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 51 1000 V 3.4 A 4 TO-220 AB C67078-S1344-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 3.4 Pulsed drain current IDpuls TC = 25 C 13.5 Avalanche current,limited by Tjmax IAR... See More ⇒

Detailed specifications: BUZ360, BUZ37, BUZ381, BUZ383, BUZ385, BUZ40B, BUZ44A, BUZ45B, AO4407A, BUZ53A, BUZ53C, BUZ54, BUZ54A, BUZ61, BUZ61A, BUZ71S2, BUZ72

Keywords - BUZ51 MOSFET specs

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