All MOSFET. BUZ51 Datasheet

 

BUZ51 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ51
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-220AB

 BUZ51 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ51 Datasheet (PDF)

 ..1. Size:118K  siemens
 buz51.pdf

BUZ51 BUZ51

BUZ 51SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 51 1000 V 3.4 A 4 TO-220 AB C67078-S1344-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 3.4Pulsed drain current IDpulsTC = 25 C 13.5Avalanche current,limited by Tjmax IAR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HAT2191WP | BUZ23

 

 
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