BUZ51 Datasheet and Replacement
Type Designator: BUZ51
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-220AB
BUZ51 substitution
BUZ51 Datasheet (PDF)
buz51.pdf

BUZ 51SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 51 1000 V 3.4 A 4 TO-220 AB C67078-S1344-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 3.4Pulsed drain current IDpulsTC = 25 C 13.5Avalanche current,limited by Tjmax IAR
Datasheet: BUZ360 , BUZ37 , BUZ381 , BUZ383 , BUZ385 , BUZ40B , BUZ44A , BUZ45B , IRFP250 , BUZ53A , BUZ53C , BUZ54 , BUZ54A , BUZ61 , BUZ61A , BUZ71S2 , BUZ72 .
History: CEM6056L
Keywords - BUZ51 MOSFET datasheet
BUZ51 cross reference
BUZ51 equivalent finder
BUZ51 lookup
BUZ51 substitution
BUZ51 replacement
History: CEM6056L



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