All MOSFET. BUZ51 Datasheet

 

BUZ51 MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ51

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: TO-220AB

BUZ51 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUZ51 Datasheet (PDF)

1.1. buz51.pdf Size:118K _update_mosfet

BUZ51
BUZ51

BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 51 1000 V 3.4 A 4 Ω TO-220 AB C67078-S1344-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 °C 3.4 Pulsed drain current IDpuls TC = 25 °C 13.5 Avalanche current,limited by Tjmax IAR

1.2. buz51.pdf Size:177K _siemens

BUZ51
BUZ51

BUZ 51 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 51 1000 V 3.4 A 4 ? TO-220 AB C67078-S1344-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 3.4 Pulsed drain current IDpuls TC = 25 C 13.5 Avalanche current,limited by Tjmax IAR 3.4 Avalanch

 

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