CHM09N6NGP MOSFET. Datasheet pdf. Equivalent
Type Designator: CHM09N6NGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 73 nC
Rise Time (tr): 26 nS
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: D2PAK
CHM09N6NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CHM09N6NGP Datasheet (PDF)
1.1. chm09n6ngp.pdf 
Size:343K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM09N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.
4.1. chm09n7ngp.pdf Size:107K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM09N7NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.
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