All MOSFET. CHM09N6NGP Datasheet

 

CHM09N6NGP MOSFET. Datasheet pdf. Equivalent

Type Designator: CHM09N6NGP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 156 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 73 nC

Rise Time (tr): 26 nS

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: D2PAK

CHM09N6NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CHM09N6NGP Datasheet (PDF)

1.1. chm09n6ngp.pdf Size:343K _update_mosfet

CHM09N6NGP
CHM09N6NGP

CHENMKO ENTERPRISE CO.,LTD CHM09N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

4.1. chm09n7ngp.pdf Size:107K _update_mosfet

CHM09N6NGP
CHM09N6NGP

CHENMKO ENTERPRISE CO.,LTD CHM09N7NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

 

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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