CHM09N6NGP Specs and Replacement
Type Designator: CHM09N6NGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: D2PAK
CHM09N6NGP substitution
CHM09N6NGP Specs
chm09n6ngp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM09N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.... See More ⇒
chm09n7ngp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM09N7NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.... See More ⇒
Detailed specifications: CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP , CHM0410JGP , CHM04N6NGP , CHM05N65PAGP , CHM05P03NGP , CHM06N5NGP , 20N60 , CHM09N7NGP , CHM1012LPAGP , CHM1012PAGP , CHM1012TGP , CHM1013TGP , CHM1023VGP , CHM1024VGP , CHM10N4NGP .
Keywords - CHM09N6NGP MOSFET specs
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