All MOSFET. CHM09N7NGP Datasheet

 

CHM09N7NGP MOSFET. Datasheet pdf. Equivalent

Type Designator: CHM09N7NGP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 32 nC

Rise Time (tr): 7 nS

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: D2PAK

CHM09N7NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM09N7NGP Datasheet (PDF)

1.1. chm09n7ngp.pdf Size:107K _update_mosfet

CHM09N7NGP CHM09N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM09N7NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

4.1. chm09n6ngp.pdf Size:343K _update_mosfet

CHM09N7NGP CHM09N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM09N6NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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