All MOSFET. CS50N06 Datasheet

 

CS50N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220

 CS50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS50N06 Datasheet (PDF)

 ..1. Size:249K  foshan
 cs50n06.pdf

CS50N06 CS50N06

BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

 0.1. Size:1911K  jilin sino
 jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf

CS50N06 CS50N06

N RN-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge

 0.2. Size:932K  blue-rocket-elect
 brcs50n06bd.pdf

CS50N06 CS50N06

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 0.3. Size:906K  blue-rocket-elect
 brcs50n06ra.pdf

CS50N06 CS50N06

BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications

 0.4. Size:837K  blue-rocket-elect
 brcs50n06dp.pdf

CS50N06 CS50N06

BRCS50N06DP Rev.B Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 0.5. Size:861K  blue-rocket-elect
 brcs50n06ip.pdf

CS50N06 CS50N06

BRCS50N06IP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-251 N N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies, HF Product. / Applications

 0.6. Size:253K  lzg
 cs50n06d.pdf

CS50N06 CS50N06

BRD50N06(CS50N06D) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C

 0.7. Size:499K  convert
 cs50n06f cs50n06p cs50n06u cs50n06d.pdf

CS50N06 CS50N06

nvertSuzhou Convert Semiconductor Co ., Ltd.CS50N06F,CS50N06P,CS50N06U,CS50N06D60V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS50N06F TO-

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: S85N16RN | IXFN360N10T

 

 
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