All MOSFET. CS50N06 Datasheet

 

CS50N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: CS50N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 460 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: TO-220

CS50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS50N06 Datasheet (PDF)

1.1. cs50n06d.pdf Size:253K _update_mosfet

CS50N06
CS50N06

BRD50N06(CS50N06D) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途:用于低压电路如:汽车电路、DC/DC 转换、便携式产品的电源高效转换。 Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. 特点:R 小,门电荷低,C 小,开关速度

1.2. cs50n06.pdf Size:249K _update_mosfet

CS50N06
CS50N06

BR50N06(CS50N06) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途:用于低压电路如:汽车电路、DC/DC 转换、便携式产品的电源高效转换。 Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. 特点:R 小,门电荷低,C 小,开关速度快

 5.1. cs50n80.pdf Size:72K _update_mosfet

CS50N06

锦州辽晶电子科技有限公司 LJ2015-05 CS50N80 型 N 沟道场效应晶体管 (产品手册更改页) 参数符号 测试条件 最小值 最大值 单位 P 125 W D I V =20V,T =25℃ 50 A D GS C 极 I 脉冲电流 100 A DM 限 V ±20 V GS 值 T 150 ℃ jm T -55 150 ℃ stg BV V =0V,I =0.1mA 800 V DSS GS D V =800V,V =0V 100 DS GS I µA DSS V =800V,V =0V

5.2. cs50n20 anh.pdf Size:418K _crhj

CS50N06
CS50N06

Silicon N-Channel Power MOSFET R ○ CS50N20 ANH General Description: VDSS 200 V CS50N20 ANH, the silicon N-channel Enhanced ID 50 A PD (TC=25℃) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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