All MOSFET. CS90N03B4 Datasheet

 

CS90N03B4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS90N03B4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 521 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252

 CS90N03B4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS90N03B4 Datasheet (PDF)

 ..1. Size:845K  wuxi china
 cs90n03b4.pdf

CS90N03B4 CS90N03B4

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:729K  crhj
 cs90n03 b4.pdf

CS90N03B4 CS90N03B4

Silicon N-Channel Power MOSFET R CS90N03 B4 General Description VDSS 25 V CS90N03 B4, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.2. Size:726K  crhj
 cs90n03 b3.pdf

CS90N03B4 CS90N03B4

Silicon N-Channel Power MOSFET RCS90N03 B3 General Description VDSS 25 V CS90N03 B3, the silicon N-channel Enhanced ID 90 A PD(TC=25) 80 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.8 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 9.1. Size:668K  jilin sino
 jcs90n10i.pdf

CS90N03B4 CS90N03B4

N RN-CHANNEL MOSFET JCS90N10I Package MAIN CHARACTERISTICS ID 90A VDSS 100V Rdson-typ - 7.0m (@Vgs=10V Qg-typ 98nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automoti

 9.2. Size:103K  china
 cs90n20d.pdf

CS90N03B4

CS90N20D N PD TC=25 580 W VGS=10V,TC=70 66 ID A VGS=10V,TC=25 94 IDM 380 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.26 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VGS=10V,ID=50A 0.023 VGS th VDS=VGS,ID=0.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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