CSP610TH Specs and Replacement
Type Designator: CSP610TH
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-267A
CSP610TH substitution
- MOSFET ⓘ Cross-Reference Search
CSP610TH datasheet
csp610th.pdf
CSP610TH P PD TC=25 40 W 0.32 W/ ID VGS=-10V,TC=25 -6.6 A ID VGS=-10V,TC=100 -4.2 A IDM -26 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 3.1 /W BVDSS VGS=0V,ID=-0.25mA -100 V RDS on VGS=-10V,ID=-3.9A 0.48 ... See More ⇒
Detailed specifications: CSM150 , CSM260 , CSM350 , CSML0060 , CSN440 , CSP064 , CSP250 , CSP2907 , AON7403 , CSP89 , CSR024 , CSR220 , CSR24N15D , CSR3410 , CSTT90P10P , CSU014 , CSY140 .
Keywords - CSP610TH MOSFET specs
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