All MOSFET. CSP610TH Datasheet

 

CSP610TH MOSFET. Datasheet pdf. Equivalent

Type Designator: CSP610TH

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.48 Ohm

Package: TO-267A

CSP610TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSP610TH Datasheet (PDF)

1.1. csp610th.pdf Size:65K _update_mosfet

CSP610TH

CSP610TH型P沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 40 W 线性降低系数 0.32 W/℃ ID （VGS=-10V,TC=25℃） -6.6 A 极 ID （VGS=-10V,TC=100℃） -4.2 A 限 IDM -26 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 3.1 ℃/W 性 BVDSS VGS=0V,ID=-0.25mA -100 V RDS on） VGS=-10V,ID=-3.9A 0.48 Ω

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top