CSP610TH MOSFET. Datasheet pdf. Equivalent
Type Designator: CSP610TH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6.6 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.48 Ohm
Package: TO-267A
CSP610TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSP610TH Datasheet (PDF)
1.1. csp610th.pdf 
Size:65K _update_mosfet
CSP610TH型P沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 40 W 线性降低系数 0.32 W/℃ ID （VGS=-10V,TC=25℃） -6.6 A 极 ID （VGS=-10V,TC=100℃） -4.2 A 限 IDM -26 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 3.1 ℃/W 性 BVDSS VGS=0V,ID=-0.25mA -100 V RDS on） VGS=-10V,ID=-3.9A 0.48 Ω
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