All MOSFET. CSP610TH Datasheet

 

CSP610TH MOSFET. Datasheet pdf. Equivalent

Type Designator: CSP610TH

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.48 Ohm

Package: TO-267A

CSP610TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CSP610TH Datasheet (PDF)

1.1. csp610th.pdf Size:65K _update_mosfet

CSP610TH

CSP610TH型P沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 40 W 线性降低系数 0.32 W/℃ ID (VGS=-10V,TC=25℃) -6.6 A 极 ID (VGS=-10V,TC=100℃) -4.2 A 限 IDM -26 A 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 3.1 ℃/W 性 BVDSS VGS=0V,ID=-0.25mA -100 V RDS on) VGS=-10V,ID=-3.9A 0.48 Ω

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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