CSTT90P10P MOSFET. Datasheet pdf. Equivalent
Type Designator: CSTT90P10P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 90 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO-258A
CSTT90P10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSTT90P10P Datasheet (PDF)
1.1. cstt90p10p.pdf 
Size:136K _update_mosfet
锦州辽晶电子科技有限公司 LJ2015-41 CSTT90P10P 型 P 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 P T =25℃（芯片功率） 462 W D C P T =25℃（受封装限制影响） 190 W D C I （V =10V,T =25℃） -90 A D GS C 极 限 I T =25℃ -225 A DM C 值 V ±20 V GS T +150 ℃ jm T -55 +150 ℃ stg BV V =0V,I =-0.25mA -1
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