All MOSFET. CSTT90P10P Datasheet

 

CSTT90P10P MOSFET. Datasheet pdf. Equivalent

Type Designator: CSTT90P10P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO-258A

CSTT90P10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CSTT90P10P Datasheet (PDF)

1.1. cstt90p10p.pdf Size:136K _update_mosfet

CSTT90P10P
CSTT90P10P

锦州辽晶电子科技有限公司 LJ2015-41 CSTT90P10P 型 P 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 P T =25℃(芯片功率) 462 W D C P T =25℃(受封装限制影响) 190 W D C I (V =10V,T =25℃) -90 A D GS C 极 限 I T =25℃ -225 A DM C 值 V ±20 V GS T +150 ℃ jm T -55 +150 ℃ stg BV V =0V,I =-0.25mA -1

Datasheet: PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , IRF510 , PHD66NQ03LT , PHD77NQ03T , PHD78NQ03LT , PHD82NQ03LT , PHD87N03LT , PHD96NQ03LT , PHD98N03LT , PHN210 .

 
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