OM11N55SA Datasheet. Specs and Replacement

Type Designator: OM11N55SA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TO254AA

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OM11N55SA datasheet

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OM11N55SA

OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest... See More ⇒

Detailed specifications: NDT451AN, NDT451N, NDT452AP, NDT452P, NDT453N, NDT454P, NDT455N, NDT456P, IRF640, OM11N60SA, OM1N100SA, OM1N100ST, OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, PHB11N50E

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