OM1N100ST Datasheet. Specs and Replacement

Type Designator: OM1N100ST  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.2 Ohm

Package: TO257AA

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OM1N100ST datasheet

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OM1N100ST

OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically pa... See More ⇒

Detailed specifications: NDT452P, NDT453N, NDT454P, NDT455N, NDT456P, OM11N55SA, OM11N60SA, OM1N100SA, IRFP260N, OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, PHB11N50E, PHB125N06LT, PHB130N03LT, PHB21N06LT

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