All MOSFET. OM1N100ST Datasheet

 

OM1N100ST Datasheet and Replacement


   Type Designator: OM1N100ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.2 Ohm
   Package: TO257AA
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OM1N100ST Datasheet (PDF)

 6.1. Size:41K  omnirel
 om1n100sa.pdf pdf_icon

OM1N100ST

OM1N100SA OM5N100SA OM1N100STOM3N100SA OM6N100SA OM3N100STPOWER MOSFET IN HERMETIC ISOLATEDJEDEC PACKAGE1000V, Up To 6 Amp, N-ChannelMOSFET In Hermetic Metal PackageFEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also AvailableDESCRIPTIONThis series of hermetically pa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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