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OM1N100ST Spec and Replacement


   Type Designator: OM1N100ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.2 Ohm
   Package: TO257AA

 OM1N100ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OM1N100ST Specs

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OM1N100ST

OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically pa... See More ⇒

Detailed specifications: NDT452P , NDT453N , NDT454P , NDT455N , NDT456P , OM11N55SA , OM11N60SA , OM1N100SA , IRF640N , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT .

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