OM6N100SA Spec and Replacement
Type Designator: OM6N100SA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.2 Ohm
Package: TO254AA
OM6N100SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OM6N100SA Specs
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Detailed specifications: NDT456P , OM11N55SA , OM11N60SA , OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , IRF3710 , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT .
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