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PHB130N03LT Spec and Replacement


   Type Designator: PHB130N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOT404

 PHB130N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHB130N03LT Specs

 4.1. Size:51K  philips
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PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC)1 75 A Thedevice fe... See More ⇒

 5.1. Size:52K  philips
 phb130n03t 1.pdf pdf_icon

PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC)1 75 A trench technology. The dev... See More ⇒

Detailed specifications: OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , IRFB4115 , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E .

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