PHB130N03LT Datasheet. Specs and Replacement

Type Designator: PHB130N03LT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SOT404

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PHB130N03LT datasheet

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PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC)1 75 A Thedevice fe... See More ⇒

 5.1. Size:52K  philips
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PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC)1 75 A trench technology. The dev... See More ⇒

Detailed specifications: OM1N100SA, OM1N100ST, OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, PHB11N50E, PHB125N06LT, IRFB4115, PHB21N06LT, PHB24N03LT, PHB2N50E, PHB2N60E, PHB37N06LT, PHB3N40E, PHB3N50E, PHB3N60E

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs