All MOSFET. PHB130N03LT Datasheet

 

PHB130N03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHB130N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOT404

 PHB130N03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHB130N03LT Datasheet (PDF)

 4.1. Size:51K  philips
 phb130n03l.pdf

PHB130N03LT PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC)1 75 AThedevice fe

 5.1. Size:52K  philips
 phb130n03t 1.pdf

PHB130N03LT PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC)1 75 Atrench technology. The dev

Datasheet: OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , IRF630 , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E .

 

 
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