All MOSFET. PHB130N03LT Datasheet

 

PHB130N03LT Datasheet and Replacement


   Type Designator: PHB130N03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOT404
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PHB130N03LT Datasheet (PDF)

 4.1. Size:51K  philips
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PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC)1 75 AThedevice fe

 5.1. Size:52K  philips
 phb130n03t 1.pdf pdf_icon

PHB130N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHB130N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC)1 75 Atrench technology. The dev

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDMS9620S | IXTH4N150 | WMM11N80M3 | IRFI7536G

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