All MOSFET. KI5P03DY Datasheet

 

KI5P03DY Datasheet and Replacement


   Type Designator: KI5P03DY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 306 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOP-8
 

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KI5P03DY Datasheet (PDF)

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KI5P03DY

SMD Type ICSMD Type MOSFESMD Type MOSFETProduct specification KI5P03DY Features 5.3 A, -30 V. RDS(ON) = 50 m @ VGS = -10 V RDS(ON) = 80 m @ VGS = -4.5 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability812 73 64 5 Absolute Maximum Ratings T

 9.1. Size:886K  kexin
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KI5P03DY

SMD Type MOSFETP-Channel MOSFETKI5P04DSSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-40V ID =-5.3 A (VGS =-10V)1 2 RDS(ON) 85m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 126m (VGS =-4.5V) +0.1D1.9-0.2 High power and current handing capabilityG 1. Gate2. Source3. DrainS Absolute Maximum

Datasheet: KI5513DC , KI5515DC , KI5902DC , KI5903DC , KI5904DC , KI5905DC , KI5908DC , KI5935DC , 2SK3878 , KI6968BEDQ , KI7540DP , KMB075N75P , KMDF2C03HD , KML0D4N20E , KML0D4P20E , KN0606L , KO3402 .

History: 2SJ555 | WMM10N65EM | FQT2P25 | RUH30150M | IRLR024PBF | FDMS86152 | RMN3N5R0DN

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