All MOSFET. KI5P03DY Datasheet

 

KI5P03DY MOSFET. Datasheet pdf. Equivalent

Type Designator: KI5P03DY

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 5.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 306 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: SOP-8

KI5P03DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

KI5P03DY Datasheet (PDF)

1.1. ki5p03dy.pdf Size:188K _update_mosfet

KI5P03DY
KI5P03DY

SMD Type IC SMD Type MOSFE SMD Type MOSFET Product specification KI5P03DY ■ Features ● 5.3 A, -30 V. RDS(ON) = 50 mΩ @ VGS = -10 V RDS(ON) = 80 mΩ @ VGS = -4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON) ● High power and current handling capability 8 1 2 7 3 6 4 5 ■ Absolute Maximum Ratings T

5.1. ki5p04ds.pdf Size:886K _kexin

KI5P03DY
KI5P03DY

SMD Type MOSFET P-Channel MOSFET KI5P04DS SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-40V ● ID =-5.3 A (VGS =-10V) 1 2 ● RDS(ON) < 85mΩ (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 126mΩ (VGS =-4.5V) +0.1 D 1.9-0.2 ● High power and current handing capability G 1. Gate 2. Source 3. Drain S ■ Absolute Maximum

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
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